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PDF M6MGD137W34DWG Data sheet ( Hoja de datos )
| Número de pieza | M6MGD137W34DWG | |
| Descripción | CMOS FLASH MEMORY | |
| Fabricantes | Renesas Technology | |
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RENESAS
CONFIDENTIAL
Renesas LSIs
M6MGD137W34DWG
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY &
33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
Stacked-CSP ( Chip Scale Package)
Description
The M6MGD137W34DWG is a Stacked Chip Scale Package
(S-CSP) that contents 128M-bit Flash memory and 32M-bit
Mobile RAM in a 72-pin Stacked CSP for lead free use.
The M6MGD137W34DWG is suitable for a high performance
cellular phone and a mobile PC that are required to be small
mounting area, weight and small power dissipation.
128M-bit Flash memory is a 8,388,608 words, single power
supply and high performance non-volatile memory fabricated
by CMOS technology for the peripheral circuit and DINOR IV
(Divided bit-line NOR IV) architecture for the memory cell. All
memory blocks are locked and can not be programmed or
erased, when F-WP# is Low. Using Software Lock Release
function, program or erase operation can be executed.
32M-bit Mobile RAM is a 2,097,152 words high density RAM
fabricated by CMOS technology for the peripheral circuit and
DRAM cell for the memory array. The interface is compatible
to an asynchronous SRAM.
Features
Access Time Flash
Mobile RAM
Supply Voltage
Ambient Temperature
Package
The cells are automatically refreshed and the refresh control is
not required for system. The device also has the partial block
refresh scheme and the power down mode by writing the
command.
Application
Mobile communication products
70ns (Max.)
80ns (Max.)
FM-VCC=2.7 ~ 3.0V
Ta= -40 ~ 85 degree
72pin S-CSP,
Ball pitch 0.80mm
Outer-ball:Su-Ag-Cu
PIN CONFIGURATION (TOP VIEW)
INDEX(Laser Marking)
1234 5678
ANC NC
BNC NC
CF-
CE2#
A18
M-
LB#
F-
WP#
GND
F-
WE#
A16 A20
DA5
A17
M-
UB#
M-
WE#
F-
RP#
F-
RY/BY#
A8
A11
EA4
A7
NC A19 NC
F-
A21
A10 A15
A0
A6
M-
OE#
DQ11
NC
NC
FA9 A14
GF-
CE1#
A3
DQ9
FM-
VCC
DQ12 DQ13 DQ15
A13
HGND A2 DQ8 DQ10 DU DQ6 NC A12
JF-
OE#
A1 DQ0 DQ2 NC DQ4 DQ14 GND
KM-
CE#
NC
DQ1 DQ3
FM-
VCC
DQ5 DQ7
NC
LNC NC
NC
(Top View)
NC M
FM-VCC : VCC for Flash / Mobile RAM
GND
: GND for Flash / Mobile RAM
A0-A20 : Common address for Flash/Mobile RAM
F-A21
: Address for Flash
DQ0-DQ15 : Data I/O
F-CE1# : Flash chip enable 1
F-CE2# : Flash chip enable 2
F-OE#
: Output enable for Flash Memory
F-WE# : Write enable for Flash Memory
8.5 mm
F-RP# : Reset power down for Flash
F-WP# : Write protect for Flash
F-RY/BY# : Flash Memory Ready /Busy
M-CE# : Mobile RAM chip enable
M-OE# : Output enable for Mobile RAM
M-WE# : Write enable for Mobile RAM
M-LB# : Lower byte control for Mobile RAM
M-UB#
NC
: Upper byte control for Mobile RAM
: Non Connection
DU : Don’t Use
1 Rev.1.2_48a_bezc
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| PDF Descargar | [ Datasheet M6MGD137W34DWG.PDF ] | |
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