(PDF) P6503NJ Datasheet - N&P-Channel Enhancement Mode Field Effect Transistor

Número de pieza	P6503NJ
Descripción	N&P-Channel Enhancement Mode Field Effect Transistor
Fabricantes	Niko
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No Preview Available ! NIKO-SEM www.DataSheet4U.com N- & P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V(BR)DSS RDS(ON) N-Channel 30 65m P-Channel -30 150m ID 4A -3A P6503NJ TSOPJW-8 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C Power Dissipation TC = 25 °C TC = 70 °C Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) VDS VGS ID IDM PD Tj, Tstg TL N-Channel P-Channel UNITS 30 -30 V ±20 ±20 V 4 -3 3 -2 A 10 -10 2 W 1.3 -55 to 150 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% TYPICAL MAXIMUM 110 UNITS °C / W 1 JUL-08-2004 1 page NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6503NJ TSOPJW-8 5 JUL-08-2004 5 Page

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PDF P6503NJ Data sheet ( Hoja de datos )