QST3 Datasheet PDF - ROHM Semiconductor
| Part Number | QST3 | |
| Description | General purpose amplification | |
| Manufacturers | ROHM Semiconductor | |
| Logo |  |
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Transistors
QST3
General purpose amplification (−30V, −5A)
QST3
zApplication
Low frequency amplifier
Driver
zFeatures
1) Collector current is large.
2) Collector saturation voltage is low.
VCE(sat) −250mV
At IC = −2A / IB = −40mA
zExternal dimensions (Unit : mm)
2.8
1.6
ROHM : TSMT6
Each lead has same dimensions
Abbreviated symbol : T03
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
−30
Collector-emitter voltage
VCEO
−30
Emitter-base voltage
VEBO
−6
Collector current
IC −5
ICP −8
Power dissipation
500
PC
1.25
Junction temperature
Tj 150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, Pw=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm×25mm× t 0.8mm Ceramic substrate
Unit
V
V
V
A
A ∗1
mW ∗2
W ∗3
°C
°C
zEquivalent circuit
6pin 5pin
4pin
1pin 2pin
3pin
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−30 − − V IC= −10µA
−30 − − V IC= −1mA
−6 − − V IE= −10µA
− − −100 nA VCB= −30V
− − −100 nA VEB= −6V
− −170 −250 mV IC= −2A, IB= −40mA
270 − 680 − VCE= −2V, IC= −500mA
∗
− 200 − MHz VCE= −2V, IE=500mA, f=100MHz ∗
− 60 − pF VCB= −10V, IE=0A, f=1MHz
Rev.B
1/2
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for QST3 electronic component. |
| Information | Total 3 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ QST3.PDF Datasheet ] | |
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