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PDF QST9 Data sheet ( Hoja de datos )
| Número de pieza | QST9 | |
| Descripción | General purpose amplification | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de QST9 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Transistors
QST9
General purpose amplification (−30V, −1A)
QST9
zApplication
Low frequency amplifier
Driver
zFeatures
1) Collector current is large.
2) Collector saturation voltage is low.
VCE(sat) : max. −350mV
At IC = −500mA / IB = −25mA
zExternal dimensions (Unit : mm)
2.8
1.6
ROHM : TSMT6
Each lead has same dimensions
Abbreviated symbol : T09
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
−30
Collector-emitter voltage
Emitter-base voltage
VCEO
VEBO
−30
−6
Collector current
IC −1
ICP −2
500
Power dissipation
PC 1.25
Junction temperature
0.9
Tj 150
Range of storage temperature Tstg −55 to+150
∗1 Single pulse, PW=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm×25mm× t0.8mm ceramic substrate
Unit
V
V
V
A
A ∗1
mW/TOTAL ∗2
W/TOTAL ∗3
W/ELEMENT ∗3
°C
°C
zEquivalent circuit
(6) (5) (4)
(1) (2) (3)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−30
−30
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−150
−
320
7
Max.
−
−
−
−100
−100
−350
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=−10µA
IC=−1mA
IE=−10µA
VCB=−30V
VEB=−6V
IC=−500mA, IB=−25mA
VCE=−2V, IC=−100mA ∗
VCE=−2V, IE=100mA, f=100MHz ∗
VCB=−10V, IE=0A, f=1MHz
Rev.A
1/2
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet QST9.PDF ] | |
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