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PDF BTS775G Data sheet ( Hoja de datos )
| Número de pieza | BTS775G | |
| Descripción | TrilithIC | |
| Fabricantes | Siemens Semiconductor | |
| Logotipo |  |
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TrilithIC™
BTS 775 G
Overview
Features
• Quad switch driver
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Ultra low RDS ON @ 25 °C:
High-side switch: typ.85 mΩ,
Low-side switch: typ. 45 mΩ
• Very high peak current capability
P-DSO-28-9
• Very low quiescent current
• Space- and thermal optimized power P-DSO-Package
• Full short-circuit-protection
• Operates up to 40 V
• Status flag diagnosis
• Overtemperature shut down with hysteresis
• Short-circuit detection and diagnosis
• Open-load detection and diagnosis
• C-MOS compatible inputs
• Internal clamp diodes
• Isolated sources for external current sensing
• Over- and under-voltage detection with hysteresis
Type
BTS 775 G
Ordering Code
Q67007-A9350
Package
P-DSO-28-9
Description
The BTS 775 G is a TrilithIC contains one double high-side switch and two low-side
switches in one P-DSO-28-9 -Package.
“Silicon instead of heatsink”
becomes true
The ultra low RDS ON of this device avoids powerdissipation. It saves costs in mechanical
construction and mounting and increases the efficiency.
The high-side switches are produced in the SIEMENS SMART SIPMOS® technology. It
is fully protected and contains the signal conditioning circuitry for diagnosis. (The
comparable standard high-side product is the BTS 621L1.)
Semiconductor Group
1
1999-01-07
1 page  
BTS 775 G
ST 8
GH1 7
GH2 9
GND 6
GL1 2
GL2 13
DHVS
5, 10, 19, 24
Diagnosis
Biasing and Protection
Driver
IN OUT
00LL
0 1LH
10HL
1 1HH
Protection
R O1 R O2
20, 21 SH2
12, 14, 15, 18 DL2
22, 23 SH1
1, 3, 25, 28 DL1
Gate
Driver
Protection
Gate
Driver
26, 27
SL1
16, 17
SL2
AEB02676
Figure 2 Block Diagram
Semiconductor Group
5
1999-01-07
5 Page 
BTS 775 G
Electrical Characteristics
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V > VS > 18 V
unless otherwise specified
Parameter
Symbol Limit Values Unit Test Condition
min. typ. max.
Current Consumption
Quiescent current
IS
Quiescent current
Supply current
Supply current
IS
IS
IS
– 16 30 µA GH1 = GH2 = L
VS = 13.2 V
Tj = 25 °C
– – 35 µA GH1 = GH2 = L
VS = 13.2 V
– 2 3.5 mA GH1 or GH2 = H
– 4 7 mA GH1 and GH2 = H
Under Voltage Lockout (UVLO)
Switch-ON voltage
VUVON
–
5.4 7
Switch-OFF voltage
VUVOFF 3.5 4.2 –
Switch ON/OFF hysteresis VUVHY –
1.2 –
V VS increasing
V VS decreasing
V
V V–UVON
UVOFF
Over Voltage Lockout (OVLO)
Switch-OFF voltage
VOVOFF 36 37.8 43 V VS increasing
Switch-ON voltage
VOVON 35 37.1 –
V VS decreasing
Switch OFF/ON hysteresis VOVHY –
0.7 –
V
V V–OVOFF
OVON
Short Circuit of Highside Switch to GND
Initial peak SC current ISCP 11 18 25 A Tj = – 40 °C
Initial peak SC current ISCP 9 14 22 A Tj = 25 °C
Initial peak SC current ISCP 5 8 14 A Tj = 150 °C
Semiconductor Group
11
1999-01-07
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet BTS775G.PDF ] | |
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