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부품번호 | GFP70N03 기능 |
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기능 | N-Channel Enhancement-Mode MOSFET | ||
제조업체 | General Semiconductor | ||
로고 | |||
전체 5 페이지수
www.DataSheet4U.com
GFP70N03
N-Channel Enhancement-Mode MOSFET
TGREENNCFHET®
VDS 30V RDS(ON) 8mΩ ID 70A
D
TO-220AB
0.415 (10.54)
Max.
0.154 (3.91)
0.142 (3.60)Dia.
0.113 (2.87)
* 0.102 (2.56)
0.155 (3.93)
D 0.134 (3.40)
0.410 (10.41)
0.350 (8.89)
PIN
G DS
0.635 (16.13)
0.580 (14.73)
0.360 (9.14)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.09 (2.28)
0.560 (14.22)
0.530 (13.46)
0.185 (4.70)
0.170 (4.31)
0.055 (1.39)
0.045 (1.14)
0.603 (15.32)
0.573 (14.55)
0.104 (2.64)
0.094 (2.39)
0.037 (0.94)
0.026 (0.66)
0.205 (5.20)
0.190 (4.83)
0.105 (2.67)
0.095 (2.41)
* May be notched or flat
0.022 (0.56)
0.014 (0.36)
Dimensions in inches
and (millimeters)
G
S
Features
• Advanced Process Technology
• High Density Cell Design for Ultra Low
On-Resistance
• Specially Designed for Low Voltage DC/DC
Converters
• Fast Switching for High Efficiency
Mechanical Data
Case: JEDEC TO-220AB molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.17” (4.3mm) from case
Mounting Torque: 10 in-lbs maximum
Weight: 2.0g
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(1)
VDS
30
VGS ±20
ID 70
Pulsed Drain Current
IDM 200
Maximum Power Dissipation
TC = 25°C
TC = 100°C
PD
62.5
25
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
Lead Temperature (1/8” from case for 5 sec.)
TL 275
Junction-to-Case Thermal Resistance
RθJC
2.0
Junction-to-Ambient Thermal Resistance
RθJA
62.5
Notes: (1) Maximum DC current limited by the package
Unit
V
A
W
°C
°C
°C/W
°C/W
5/16/01
GFP70N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
0.03
0.025
0.02
0.015
0.01
0.005
0
2
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
Fig. 6 – On-Resistance
vs. Gate-to-Source Voltage
ID = 35A
TJ = 125°C
25°C
468
VGS -- Gate-to-Source Voltage (V)
10
Fig. 8 – Capacitance
f = 1MHZ
VGS = 0V
Ciss
Crss
Coss
5 10 15 20 25
VDS -- Drain-to-Source Voltage (V)
30
Fig. 7 – Gate Charge
10
VDS = 15V
ID = 35A
8
6
4
2
0
0 10 20 30 40 50 60
Qg -- Gate Charge (nC)
Fig. 9 – Source-Drain Diode
Forward Voltage
100
VGS = 0V
70
10
1 TJ = 125°C
25°C
--55°C
0.1
0.01
0
0.2 0.4 0.6 0.8 1 1.2
VSD -- Source-to-Drain Voltage (V)
1.4
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부품번호 | 상세설명 및 기능 | 제조사 |
GFP70N03 | N-Channel Enhancement-Mode MOSFET | General Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |