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부품번호 | FDS8960C 기능 |
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기능 | Dual N & P-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
www.DataSheet4U.com
August 2005
FDS8960C
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• Q1: N-Channel
7.0A, 35V RDS(on) = 0.024Ω @ VGS = 10V
RDS(on) = 0.032Ω @ VGS = 4.5V
• Q2: P-Channel
–5A, –35V RDS(on) = 0.053Ω @ VGS = –10V
RDS(on) = 0.087Ω @ VGS = –4.5V
• Fast switching speed
• RoHS compliant
DD2DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS8960C
FDS8960C
13”
Q2
5
6
Q1
7
8
4
3
2
1
Q1 Q2
35 –35
±20 ±25
7 –5
20 –20
2
1.6
1
0.9
–55 to +150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS8960C Rev C(W)
www.fairchildsemi.com
Typical Characteristics: Q1 (N-Channel)
20
VGS = 10V
6.0V
16
4.5V
3.5V
12
8
3.0V
4
0
0 0.5 1 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
2.6
2.4
2.2
2
VGS = 3.5V
1.8
1.6
4.0V
1.4
4.5V
1.2 5.0V
6.0V
1
0.8
0
4 8 12 16
ID, DRAIN CURRENT (A)
10V
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 7A
VGS = 10V
1.6
1.4
1.2
1
0.8
0.6
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.065
0.055
ID = 3.5A
0.045
0.035
TA = 125oC
0.025
0.015
2
TA = 25oC
3 4 5 67 8 9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
VDS = 5V
25
20
TA = -55oC
25oC
125 oC
15
10
5
0
1.5
2.5 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4.5
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55 oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8960C Rev C(W)
www.fairchildsemi.com
4페이지 Typical Characteristics: Q2 (P-Channel)
10
ID = -5A
8
6
VDS = -10V
-20V
-15V
4
2
0
0 2 4 6 8 10 12
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1ms
10ms
100ms
1 1s
10s
DC
VGS = -10V
0.1 SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100 µs
100
Figure 19. Maximum Safe Operating Area.
800
700
C ISS
600
f = 1 MHz
VGS = 0 V
500
400
300
COSS
200
100
CRSS
0
0
5
10 15 20 25
-VDS, DRAIN TO SOURCE VOLTAGE (V)
30
35
Figure 18. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 135°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100 1000
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 135oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8960C Rev C(W)
www.fairchildsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS8960C | Dual N & P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |