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MRFG35002N6T1 데이터시트 PDF




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부품번호 MRFG35002N6T1 기능
기능 Gallium Arsenide PHEMT RF Power Field Effect Transistor
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MRFG35002N6T1 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ =
65 mA, Pout = 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 10 dB
Drain Efficiency — 27%
ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth
1.5 Watts P1dB @ 3550 MHz, CW
Excellent Phase Linearity and Group Delay Characteristics
High Gain, High Efficiency and High Linearity
RoHS Compliant.
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MRFG35002N6
Rev. 1, 5/2006
MRFG35002N6T1
3.5 GHz, 1.5 W, 6 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature (1)
Operating Case Temperature Range
Table 2. Thermal Characteristics
VDSS
VGS
Pin
Tstg
Tch
TC
8
-5
22
- 65 to +150
175
- 20 to +85
Characteristic
Symbol
Value (2)
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
RθJC
15.2
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1 260
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
dBm
°C
°C
°C
Unit
°C/W
Unit
°C
© Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35002N6T1
1




MRFG35002N6T1 pdf, 반도체, 판매, 대치품
C13
C12 C11 C10 C9
C8
C7
R1
C5 C6
C2
C1
C3
C4
C14
C18 C17 C16 C15
C19
C20
C22 C21
C23 C24
MRFG35002M6, Rev. 2
3.5 GHz - 3.6 GHz
Figure 2. MRFG35002N6 Test Circuit Component Layout
MRFG35002N6T1
4
RF Device Data
Freescale Semiconductor

4페이지










MRFG35002N6T1 전자부품, 판매, 대치품
Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 65 mA
f
GHz
0.50
|S11|
0.906
S11
∠φ
- 173.61
|S21|
6.43
S21
∠φ
84.54
|S12|
0.0316
S12
0.55
0.906
- 175.37
5.86
82.68
0.0319
0.60
0.906
- 176.93
5.38
80.94
0.0320
0.65
0.906
- 178.40
4.98
79.21
0.0317
0.70
0.908
- 179.79
4.65
77.51
0.0320
0.75
0.907
179.01
4.34
75.94
0.0320
0.80
0.907
177.87
4.08
74.33
0.0321
0.85
0.907
176.78
3.85
72.72
0.0323
0.90
0.908
175.82
3.65
71.14
0.0324
0.95
0.908
174.92
3.46
69.56
0.0322
1.00
0.907
174.04
3.30
68.00
0.0322
1.05
0.908
173.19
3.15
66.45
0.0324
1.10
0.909
172.44
3.02
64.84
0.0325
1.15
0.909
171.49
2.90
63.23
0.0327
1.20
0.907
170.67
2.79
61.71
0.0327
1.25
0.907
169.76
2.68
60.14
0.0328
1.30
0.907
168.81
2.59
58.62
0.0328
1.35
0.911
167.94
2.50
57.03
0.0330
1.40
0.904
167.04
2.43
55.47
0.0334
1.45
0.906
165.86
2.36
53.91
0.0334
1.50
0.905
164.68
2.30
52.30
0.0333
1.55
0.907
162.72
2.18
51.28
0.0325
1.60 0.908 161.85
2.11
49.87
0.0327
1.65
0.908
160.93
2.06
48.41
0.0328
1.70
0.908
160.05
2.00
46.98
0.0328
1.75 0.907 159.11
1.95
45.59
0.0330
1.80
0.907
158.22
1.90
44.16
0.0330
1.85
0.907
157.41
1.86
42.77
0.0330
1.90
0.907
156.52
1.82
41.41
0.0332
1.95
0.907
155.57
1.78
39.95
0.0332
2.00
0.906
154.82
1.74
38.64
0.0335
2.05
0.905
153.97
1.71
37.30
0.0336
2.10
0.904
153.06
1.67
35.97
0.0339
2.15
0.905
152.15
1.65
34.63
0.0339
2.20
0.903
151.26
1.62
33.28
0.0340
2.25
0.902
150.30
1.59
31.95
0.0341
2.30
0.901
149.48
1.57
30.67
0.0344
2.35
0.901
148.64
1.55
29.34
0.0345
2.40
0.900
147.66
1.53
28.02
0.0348
2.45
0.899
146.68
1.52
26.72
0.0351
2.50
0.899
145.77
1.50
25.40
0.0353
2.55
0.897
144.90
1.49
24.06
0.0356
2.60
0.896
143.88
1.47
22.69
0.0361
2.65
0.895
143.15
1.46
21.34
0.0365
2.70
0.894
142.07
1.45
19.94
0.0370
2.75
0.893
141.15
1.43
18.49
0.0375
∠φ
1.5
0.8
- 0.6
- 1.7
- 2.8
- 3.3
- 4.3
- 5.5
- 6.3
- 6.7
- 7.7
- 8.9
- 9.2
- 10.6
- 11.6
- 12.0
- 13.3
- 14.1
- 14.8
- 16.2
- 16.9
- 17.3
- 17.9
- 18.7
- 19.8
- 20.1
- 20.6
- 21.2
- 22.4
- 22.9
- 23.8
- 24.5
- 25.1
- 26.0
- 26.8
- 27.4
- 28.0
- 28.5
- 29.1
- 29.6
- 30.6
- 31.2
- 31.7
- 32.5
- 33.3
- 34.0
RF Device Data
Freescale Semiconductor
S22
|S22|
∠φ
0.713
- 174.6
0.714
- 175.9
0.714
- 177.3
0.713
- 178.6
0.713
- 179.9
0.712
178.9
0.713
177.6
0.713
176.4
0.713
175.1
0.712
173.7
0.711
172.4
0.712
171.1
0.711
169.7
0.711
168.2
0.711
167.0
0.709
165.7
0.709
164.5
0.713
163.5
0.706
162.3
0.707
161.1
0.707
160.1
0.712
161.0
0.712
160.0
0.713
159.1
0.713
158.1
0.712
157.3
0.713
156.4
0.714
155.6
0.713
154.8
0.713
154.0
0.713
153.4
0.712
152.7
0.712
152.1
0.712
151.5
0.711
150.9
0.709
150.3
0.709
149.7
0.707
149.2
0.705
148.6
0.703
148.0
0.703
147.3
0.699
146.8
0.697
146.2
0.695
145.6
0.692
144.9
0.689
144.2
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부품번호상세설명 및 기능제조사
MRFG35002N6T1

Gallium Arsenide PHEMT RF Power Field Effect Transistor

Freescale Semiconductor
Freescale Semiconductor

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