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부품번호 | IRL5NJ7413 기능 |
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기능 | HEXFET POWER MOSFET SURFACE MOUNT | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 7 페이지수
www.DataSheet4U.com
PD - 94271B
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRL5NJ7413
30V, N-CHANNEL
Product Summary
Part Number
BVDSS
IRL5NJ7413
30V
RDS(on)
0.014Ω
ID
22A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-0.5
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
22*
22*
88
75
0.60
±16
190
22
7.5
1.0
-55 to 150
300 (for 5 s)
1.0
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
08/23/04
IRL5NJ7413
3000
2500
2000
1500
1000
VCCCGirossssSss
=
=
=
=
0V,
CCCggdsds
+
+
f = 1MHz
Cgd , Cds
Cgd
SHORTED
Ciss
Coss
500
0
1
Crss
10
VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 22A
16
12
VDS = 24V
VDS = 15V
VDS = 6V
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 20 40 60 80
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
TJ = 25° C
1
0.1
0.4
VGS = 0 V
0.8 1.2
VSD ,Source-to-Drain Voltage (V)
1.6
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
10ms
VDS , Drain-toSource Voltage (V)
100
Fig 8. Maximum Safe Operating Area
www.irf.com
4페이지 Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25 V, Starting TJ = 25°C, L=0.8mH
Peak IAS =22A, VGS = 10 V, RG= 25Ω
IRL5NJ7413
ISD ≤ 22A, di/dt ≤ 140 A/µs,
VDD ≤ 30V, TJ ≤ 150°C
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/04
www.irf.com
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부품번호 | 상세설명 및 기능 | 제조사 |
IRL5NJ7413 | HEXFET POWER MOSFET SURFACE MOUNT | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |