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PDF MMBFJ271 Data sheet ( Hoja de datos )
| Número de pieza | MMBFJ271 | |
| Descripción | P-Channel Switch | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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MMBFJ271
P-Channel Switch
June 2006
tm
Features
• This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 88.
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
VDG Drain-Gate Voltage
-30
VGS Gate-Source Voltage
30
IGF Forward Gate Current
50
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
- These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
G
S
D
SOT-23
Mark : 62T
Units
V
V
mA
°C
Thermal Characteristics
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Value
225
1.8
556
Units
mW
mW/°C
°C/W
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics (Note3)
V(BR)GSS
Gate-Source Breakdwon Voltage
IGSS
Gate Reverse Current
VGS(off)
Gate-Source Cutoff Voltage
On Characteristics (Note3)
IG = 1.0µA, VDS = 0
VGS = 20V, VDS = 0
VDS = -15V, ID = -1.0nA
IDSS
Zero-Gate Voltage Drain Current * VDS = -15V, VGS = 0
gfs
Forward Transferconductance
VGS = 0V, VDS = 15V, f = 1.0kHz
goss
Common- Source Output Conduc- VGS = 0V, VDS = 15V, f = 1.0kHz
tance
Note3 : Short duration test pulse used to minimize self-heating effect.
MIN
30
1.5
-6.0
8000
MAX
Units
V
200 pA
4.5 V
-50
18000
500
mA
µmhos
µmhos
©2006 Fairchild Semiconductor Corporation
MMBFJ271 Rev. A
1
www.fairchildsemi.com
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