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부품번호 | PESD5V0S1UB 기능 |
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기능 | (PESDxS1UB) ESD PROTECTION DIODES IN SOD 523 PACKAGE | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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www.DataSheet4U.com
PESDxS1UB series
ESD protection diodes in SOD 523 package
Rev. 01 — 14 June 2004
Product data sheet
1. Product profile
1.1 General description
Unidirectional ESD protection diode in a SOD523 plastic package designed to protect one
transmission or data line from the damage caused by ESD (Electro Static Discharge) and
other transients.
1.2 Features
s Unidirectional ESD protection of one line
s Max. peak pulse power: PPP = 330 W at tp = 8/20 µs
s Low clamping voltage: VCL = 20 V at IPP = 18 A
s Ultra low leakage current: IRM < 700 nA
s ESD protection > 23 kV
s IEC 61000-4-2, level 4 (ESD)
s IEC 61000-4-5 (surge); IPP = 18 A at tp = 8/20 µs.
1.3 Applications
s Computers and peripherals
s Communication systems
s Audio and video equipment
s Data lines
s CAN bus protection.
1.4 Quick reference data
Table 1:
Symbol
VRWM
Quick reference data
Parameter
Conditions
reverse standoff voltage
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
Value
3.3
5
12
15
24
Unit
V
V
V
V
V
www.DataSheet4U.com
Philips Semiconductors
PESDxS1UB series
ESD protection diodes in SOD 523 package
120
Ipp
(%)
80
40
100 % Ipp; 8 µs
001aaa630
e−t
50 % Ipp; 20 µs
0
0 10 20 30 40
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5.
Ipp
100 %
90 %
001aaa631
10 %
tr = 0.7 to 1 ns
30 ns
60 ns
t
Fig 2. Electro Static Discharge (ESD) pulse waveform
according to IEC 61000-4-2.
9397 750 13313
Product data sheet
Rev. 01 — 14 June 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
4 of 15
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Philips Semiconductors
PESDxS1UB series
ESD protection diodes in SOD 523 package
104
Ppp
(W)
103
001aaa147
1.2
Ppp
Ppp(25˚C)
0.8
001aaa193
(1)
102
(2)
0.4
10
1
10 102 103 104
tp (µs)
Tamb = 25 °C
tp = 8/20 µs exponentially decay waveform,
see Figure 1.
(1) PESD3V3S1UB and PESD5V0S1UB.
(2) PESD12VS1UB, PESD15VS1UB; PESD24VS1UB.
Fig 3. Peak pulse power dissipation as a function of
pulse time; typical values.
240
Cd
(pF)
200
001aaa148
0
0 50 100 150 200
Tj (°C)
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values.
50
Cd
(pF)
40
001aaa149
160
(1)
120 (2)
80
30
20 (1)
(2)
(3)
10
40
0123
f = 1 MHz; Tamb = 25 °C
(1) PESD3V3S1UB.
(2) PESD5V0S1UB.
45
VR (V)
Fig 5. Diode capacitance as a function of reverse
voltage; typical values.
0
0 5 10 15 20 25
VR (V)
f = 1 MHz; Tamb = 25 °C
(1) PESD12VS1UB.
(2) PESD15VS1UB.
(3) PESD24VS1UB.
Fig 6. Diode capacitance as a function of reverse
voltage; typical values.
9397 750 13313
Product data sheet
Rev. 01 — 14 June 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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부품번호 | 상세설명 및 기능 | 제조사 |
PESD5V0S1UA | (PESD5V0S1UA / PESD12VS1UA) Unidirectional ESD Protection | NXP Semiconductors |
PESD5V0S1UB | (PESDxS1UB) ESD PROTECTION DIODES IN SOD 523 PACKAGE | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |