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PDF MRF5S19130HR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF5S19130HR3 | |
| Descripción | CDMA and multicarrier amplifier applications | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ =
1200 mA, Pout = 26 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 13 dB
Drain Efficiency — 25%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 51 dB in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 110 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF5S19130H
Rev. 2, 5/2006
MRF5S19130HR3
MRF5S19130HSR3
1930- 1990 MHz, 26 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19130HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19130HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +65
- 0.5, +15
438
2.50
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ TC = 25°C
Derate above 25°C
Tstg - 65 to +150
TC 150
TJ 200
CW 160
1
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 115 W CW
Case Temperature 78°C, 26 W CW
RθJC
0.40
0.46
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
W
W/°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
1
1 page  
TYPICAL CHARACTERISTICS
15 40
14
13 Gps
35
30
12 ηD
11
10 IRL
9
VDD = 28 Vdc, Pout = 26 W (Avg.), IDQ = 1200 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
25
20
−10
−20
8 IM3
−30
7
ACPR
6
−40
−50
5 −60
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
@ Pout = 26 Watts Avg.
−5
−10
−15
−20
−25
−30
16
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
15 Two−Tone Measurement, 2.5 MHz Tone Spacing
IDQ = 1800 mA
14
1500 mA
13 1200 mA
12 900 mA
11
600 mA
10
1
10 100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−25
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
−30 Two−Tone Measurement, 2.5 MHz Tone Spacing
−35
IDQ = 1800 mA
−40
600 mA
−45
−50
1500 mA
1200 mA
−55
900 mA
−60
1
10
100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
−20
−25
−30 3rd Order
−35
−40 5th Order
−45
7th Order
−50
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA
−55 Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−60
0.1 1
10
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
RF Device Data
Freescale Semiconductor
60
59
58 Ideal
57
56 P3dB = 53.11 dBm (205.57 W)
55
P1dB = 52.54 dBm (179.61 W)
54
53
Actual
52
51
50 VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 8 μsec (on), 1 msec (off)
49
48
f = 1960 MHz
35 36 37 38 39 40 41 42 43 44 45
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MRF5S19130HR3 MRF5S19130HSR3
5
5 Page 
PACKAGE DIMENSIONS
B
B
(FLANGE)
K
H
E
A
G
1
2X Q
bbb M T A M B M
3
2
D
bbb M T A M B M
M (INSULATOR)
bbb M T A M B M
N (LID)
ccc M T A M B M
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
A
(FLANGE)
C
T
SEATING
PLANE
F
CASE 465B - 03
ISSUE D
NI - 880
MRF5S19130HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
INCHES
DIM MIN MAX
A 1.335 1.345
B 0.535 0.545
C 0.147 0.200
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
G 1.100 BSC
H 0.057 0.067
K 0.170 0.210
M 0.872 0.888
N 0.871 0.889
Q .118 .138
R 0.515 0.525
S 0.515 0.525
aaa 0.007 REF
bbb 0.010 REF
ccc 0.015 REF
MILLIMETERS
MIN MAX
33.91 34.16
13.6 13.8
3.73 5.08
12.57 12.83
0.89 1.14
0.08 0.15
27.94 BSC
1.45 1.70
4.32 5.33
22.15 22.55
19.30 22.60
3.00 3.51
13.10 13.30
13.10 13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
B
1
B
(FLANGE)
K2
D
bbb M T A M B M
M (INSULATOR)
bbb M T A M B M
N (LID)
ccc M T A M B M
H
C
E
A
A
(FLANGE)
T
SEATING
PLANE
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
A 0.905 0.915
B 0.535 0.545
C 0.147 0.200
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.872 0.888
N 0.871 0.889
R 0.515 0.525
S 0.515 0.525
aaa 0.007 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
22.99 23.24
13.60 13.80
3.73 5.08
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
22.15 22.55
19.30 22.60
13.10 13.30
13.10 13.30
0.178 REF
0.254 REF
0.381 REF
CASE 465C - 02
ISSUE D
NI - 880S
MRF5S19130HSR3
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF5S19130HR3.PDF ] | |
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