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PDF FQB16N25C Data sheet ( Hoja de datos )
| Número de pieza | FQB16N25C | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FQB16N25C/FQI16N25C
250V N-Channel MOSFET
Features
• 15.6A, 250V, RDS(on) = 0.27 Ω @VGS = 10 V
• Low gate charge ( typical 41nC)
• Low Crss ( typical 68pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
June 2006
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switching DC/DC converters, switch mode power
supplies, DC-AC converters for uninterrupted power supplies
and motor controls.
D
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C)*
Power Dissipation (TC = 25°C)
- Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
G
S
FQB16N25C / FQI16N25C
250
15.6
9.8
62.4
± 30
410
15.6
13.9
5.5
3.13
139
1.11
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
FQB16N25C / FQI16N25C
0.9
40
62.5
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQB16N25C/FQI16N25C Rev. A1
1
www.fairchildsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQB16N25C/FQI16N25C Rev. A1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FQB16N25C.PDF ] | |
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