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RGE1000 데이터시트 PDF




ETC에서 제조한 전자 부품 RGE1000은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 RGE1000 기능
기능 (RGE Series) Selection Guide and Product Data
제조업체 ETC
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RGE1000 데이터시트, 핀배열, 회로
www.DataSheet4U.com
RGE Selection Guide
and Product Data
This section has two parts:
• A Selection Guide that walks you through the process of
selecting the correct RGE device for a circuit.
• Product Data that outlines electrical characteristics,
physical characteristics, agency recognitions, environmental
specifications, component layouts, tape and reel specifications,
and ordering information for RGE devices.
RGE Selection Guide
Follow these seven steps to select a PolySwitch RGE device for
a circuit:
1. Define the operating parameters for the circuit.
These include:
• Maximum ambient operating temperature
• Normal operating current
• Maximum operating voltage (RGE is 16 V maximum)
• Maximum interrupt current
2. Select the RGE device that accommodates the circuit’s maximum
ambient operating temperature and normal operating current.
3. Compare the RGE device’s maximum operating voltage and maxi-
mum interrupt current with the circuit’s to be sure the circuit does
not exceed the device ratings.
4. Check the RGE device’s time-to-trip be to sure it will protect the
circuit.
5. Verify that the circuit’s ambient operating temperatures are within
the RGE device’s operating temperature range.
6. Verify that the RGE device’s dimensions fit the application’s space
considerations.
7. Independently evaluate and test the suitability and performance
of the RGE device in the application.
4
®
®
TUV Rheinland
Raychem Circuit Protection Devices
RGE Devices 129




RGE1000 pdf, 반도체, 판매, 대치품
RGE
Radial Leaded
Typical time-to-trip at 25°C
4
A = RGE300
B = RGE400
C = RGE500
D = RGE600
E = RGE700
F = RGE800
G = RGE900
H = RGE1000
I = RGE1100
J = RGE1200
K = RGE1400
4. Determine time-to-trip.
Time-to-trip is the amount of time it takes for a device to switch to a
high-resistance state once a fault current has been applied across the
device.
Identifying the RGE device’s time-to-trip is important in order to provide
the desired protection capabilities. If the device you choose trips
too fast, undesired or nuisance tripping will occur. If the device trips
too slowly, the components being protected may be damaged before
the device switches to a high-resistance state.
The chart below shows the typical time-to-trip at 25°C for each
PolySwitch RGE device. For example, the chart indicates that the typi-
cal time-to-trip for RGE500 at 10 A is 10 seconds.
On the chart below, find the typical time-to-trip for the RGE device you
selected. If the RGE device’s time-to-trip is too fast or too slow for the
circuit, go back to Step 2 and choose an alternate device.
1000
100
10
1
0
.01
.001
1
A B C D E FGH I J K
10
Fault current (A)
100
132 RGE Devices
Raychem Circuit Protection Devices

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RGE1000 전자부품, 판매, 대치품
Environmental specifications
Test
Passive aging
Humidity aging
Thermal shock
Solvent resistance
Test method
Raychem PS300
Raychem PS300
Raychem PS300
Raychem PS300, Method 215
Conditions
–40°C, 1000 hours
85°C, 1000 hours
85°C, 85% R.H., 1000 hours
85°C, –40°C (10 times)
MIL-STD-202, Method 215F
RGE
Radial Leaded
Resistance
change
±5%
±5%
±5%
±5%
No change
Component layouts
The dimensions in the table below provide the component layout for
each RGE device.
Component layout dimensions (millimeters/inches)
BA
B
Device
RGE300
New RGE400
RGE500
New RGE600
RGE700
New RGE800
RGE900
New RGE1000
RGE1100
New RGE1200
New RGE1400
A
nom.
5.1 (0.20)
5.1 (0.20)
5.1 (0.20)
5.1 (0.20)
5.1 (0.20)
5.1 (0.20)
5.1 (0.20)
5.1 (0.20)
5.1 (0.20)
10.2 (0.40)
10.2 (0.40)
B
max.
1.2 (0.05)
1.4 (0.06)
1.6 (0.06)
1.6 (0.06)
1.7 (0.07)
1.8 (0.07)
2.0 (0.08)
2.0 (0.08)
2.4 (0.09)
1.5 (0.06)
1.9 (0.07)
4
Raychem Circuit Protection Devices
RGE Devices 135

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RGE1000

(RGE Series) Selection Guide and Product Data

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