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PDF SI4532DY Data sheet ( Hoja de datos )
| Número de pieza | SI4532DY | |
| Descripción | N- and P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Si4532DY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
30
P-Channel
–30
RDS(ON) (W)
0.065 @ VGS = 10 V
0.095 @ VGS = 4.5 V
0.085 @ VGS = –10 V
0.19 @ VGS = –4.5 V
ID (A)
"3.9
"3.1
"3.5
"2.5
D1
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
G1
S1
N-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
PARAMETER
SYMBOL NĆCHANNEL
PĆCHANNEL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)A
Maximum Power DissipationA
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30 –30
"20
"20
"3.9
"3.5
"3.1
"2.8
"20
"20
1.7 –1.7
2.0
1.3
–55 to 150
UNIT
V
A
W
_C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
NĆ OR PĆCHANNEL
UNIT
Maximum Junction-to-AmbientA
RthJA
62.5
_C/W
Notes
A. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70155.
For SPICE model information via the Worldwide Web: http://www.siliconix.com/www/product/spice.htm
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
3-1
1 page  
Si4532DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
PĆCHANNEL
Output Characteristics
20
VGS = 10, 9, 8, 7, 6 V
16
5V
12
Transfer Characteristics
20
TC = –55_C
16
25_C
12
125_C
8
4
0
0
0.40
4V
3V
246
VDS – Drain-to-Source Voltage (V)
OnĆResistance vs. Drain Current
8
8
4
0
0
700
123456
VGS – Gate-to-Source Voltage (V)
Capacitance
7
0.32
0.24
0.16
0.08
VGS = 4.5 V
VGS = 10 V
600
500
400
300
Coss
200
100 Crss
Ciss
0
0 3 6 9 12 15
ID – Drain Current (A)
0
0 6 12 18 24 30
VDS – Drain-to-Source Voltage (V)
Gate Charge
10
VDS = 10 V
ID = 2.5 A
8
6
4
2
0
02468
Qg – Total Gate Charge (nC)
10
OnĆResistance vs. Junction Temperature
2.0
VGS = 10 V
1.8 ID = 2.5 A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
–50 –25
0 25 50 75 100 125 150
TJ – Junction Temperature (_C)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
3-5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI4532DY.PDF ] | |
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