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FQPF13N50CF 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FQPF13N50CF은 전자 산업 및 응용 분야에서
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부품번호 FQPF13N50CF 기능
기능 N-Channel MOSFET
제조업체 Fairchild Semiconductor
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FQPF13N50CF 데이터시트, 핀배열, 회로
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FQP13N50CF / FQPF13N50CF
500V N-Channel MOSFET
May 2006
FRFET TM
Features
• 13A, 500V, RDS(on) = 0.54@VGS = 10 V
• Low gate charge (typical 43 nC)
• Low Crss (typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 100ns)
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
G
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FQP13N50CF FQPF13N50CF
500
13 13*
8 8*
52 52*
± 30
530
13
19.5
4.5
195 48
1.56 0.39
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQP13N50CF
0.64
62.5
FQPF13N50CF
2.58
62.5
Unit
°C/W
°C/W
© 2006 Fairchild Semiconductor Corporation
FQP13N50CF / FQPF13N50CF Rev. A1
1
www.fairchildsemi.com




FQPF13N50CF pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9 Notes:
1.
2.
VIDG=S =2500Vµ
A
0.8
-100
-50 0
50 100 150
TJ, JunctionTemperature[oC]
200
Figure 9-1. Maximum Safe Operating Area
for FQP13N50CF
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1.
2.
VIDG=S
= 10 V
6.5 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9-2. Maximum Safe Operating Area
for FQPF13N50CF
103
Operation in This Area
is Limited by R DS(on)
102
10 µs
100 µs
101 1ms
10ms
100ms
100 DC
10-1
10-2
100
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-SourceVoltage[V]
Figure 10. Maximum Drain Current
vs. Case Temperature
103
103
102
101
100
10-1
10-2
100
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
1ms
10ms
100ms
DC
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-SourceVoltage[V]
103
14
12
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature [ ]
FQP13N50CF / FQPF13N50CF Rev. A1
4
www.fairchildsemi.com

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FQPF13N50CF 전자부품, 판매, 대치품
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQP13N50CF / FQPF13N50CF Rev. A1
7
www.fairchildsemi.com

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