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PDF 5N60 Data sheet ( Hoja de datos )

Número de pieza 5N60
Descripción N-CHANNEL MOSFET
Fabricantes Unisonic Technologies 
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No Preview Available ! 5N60 Hoja de datos, Descripción, Manual

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UNISONIC TECHNOLOGIES CO., LTD
5N60
4.5 Amps, 600 Volts
N-CHANNEL MOSFET
Power MOSFET
DESCRIPTION
The UTC 5N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
1
TO-220
1
TO-220F
FEATURES
* RDS(ON) = 2.5@VGS = 10 V
* Ultra low gate charge ( typical 15 nC )
* Low reverse transfer Capacitance ( CRSS = typical 6.5 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
*Pb-free plating product number: 5N60L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
5N60-TA3-T
5N60L-TA3-T
5N60-TF3-T
5N60L-TF3-T
Package
TO-220
TO-220F
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
5N60L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-065,B

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5N60 pdf
5N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
RG
10V
Pulse Width 1 s
Duty Factor 0.1%
RL
VDD
D.U.T.
VDS 90%
10%
VGS
tD(ON )
tR
Power MOSFET
tD (OFF)
tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
50k as D.U.T.
12V
0.2 F
0.3 F
10V
QG
VGS
VDS
QGS
QGD
3mA
DUT
VG
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
VDS
L
BVDSS
10V
RD
tp
D.U.T.
VDD
IAS
tp Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-065,B

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