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부품번호 | STK800 기능 |
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기능 | N-channel Power MOSFET | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 12 페이지수
www.DataSheet4U.com
STK800
N-channel 30V - 0.006Ω - 20A - PolarPAK®
STripFET™ Power MOSFET
General features
Type VDSS RDS(on)
STK800 30V <0.0078Ω
RDS(on)*Qg
80.4nC*mΩ
PTOT
5.2W
■ Ultra low top and bottom junction to case
thermal resistance
■ Very low capacitances
■ 100% Rg tested
■ Fully incapsulated die
■ In compliance with the 2002/95/EC european
directive
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, moreover the double sides
cooling package with ultra low junction to case
thermal resistance allows to handle higher levels
of current.
Applications
■ Switching application
PolarPAK®
Internal schematic diagram
Bottom View
Top View
Order codes
Part number
STK800
Marking
K800
Package
PolarPAK®
Packaging
Tape & reel
March 2006
Rev 3
1/12
www.st.com
12
Electrical characteristics
2 Electrical characteristics
STK800
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test condictions
Min. Typ. Max. Unit
ID = 250µA, VGS= 0
30
VDS = Max rating,
VDS = Max rating,Tc=125°C
V
1 µA
10 µA
VGS = ±16V
±100 nA
VDS= VGS, ID = 250µA
VGS= 10V, ID= 10A
VGS= 4.5V, ID= 10A
1 2.5 V
0.006 0.0078 Ω
0.0075 0.0098 Ω
Table 4. Dynamic
Symbol
Parameter
Test condictions
gfs (1) Forward transconductance VDS =15V, ID = 10 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=15V, ID = 20A
VGS =4.5V
(see Figure 14)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
44 S
1380
450
75
pF
pF
pF
13.4
3.4
4.5
nC
nC
nC
4/12
4페이지 STK800
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Normalized BVDSS vs temperature
7/12
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부품번호 | 상세설명 및 기능 | 제조사 |
STK800 | N-channel Power MOSFET | ST Microelectronics |
STK800 | N-channel Power MOSFET | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |