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부품번호 K7Q163654A 기능
기능 (K7Q161854A / K7Q163654A) 1Mx18-bit QDR SRAM
제조업체 Samsung semiconductor
로고 Samsung semiconductor 로고


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K7Q163654A 데이터시트, 핀배열, 회로
K7Q163654A
K7Q161854A
www.DataSheet4U.com
512Kx36 & 1Mx18 QDRTM b4 SRAM
Document Title
512Kx36-bit, 1Mx18-bit QDRTM SRAM
Revision History
Rev. No.
History
0.0 1. Initial document.
0.1 1. Amendment
1) Page 3,4 PIN NAME DESCRIPTION
W (4A) : from Read Control Pin to Write Control
R (8A) : from Write Control Pin to Read Control
BW0(7B),BW1(7A),BW2(5A),BW3(5B) :
from Read Control Pin to Byte Wrtie Control
2) Page 7 STATE DIAGRAM
from LEAD NOP to READ NOP
0.2 1. Amendment
1) Page 8 WRITE TRUTH TABLE(x36)
BW2,BW3 values for WRITE ALL BYTEs( K↑ ) and
WRITE ALLBYTEs( K↑ ) : from "H" to " L"
2) Page 13 TIMING WAVE FORMS Note 2 supplement
0.3 1. 1.8V I/O supply voltage addition
1) Page 2 FEATURES
2) Page 3,4 PIN NAME VDDQ
3) Page 10, OPERATING CONTITIONS
4) Page 11 AC TEST CONTITIONS
2. Amendment
1) Page 15 BOUNDARY SCAN ORDER EXIT
0.4 1. Icc, Isb addition
2. 1.8V Vddq addition
0.5 1. Reserved pin for high density name change from NC to Vss/SA
0.6 1. Release Icc.
part #
x18
From
To
x36
From
To
-20 500 520 530 600
-16 -
- 490 550
-13 -
- 460 490
-10 - - - -
Draft Date
April 30, 2001
May, 13, 2001
Remark
Advance
Advance
May, 26, 2001
Advance
June, 11, 2001
Advance
Sep, 03, 2001
Nov, 30, 2001
Advance
Preliminary
May, 22. 2002
Preliminary
1.0 1. Final SPEC release
2. Modify thermal resistance
July, 03. 2002
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
- 1 - July. 2002
Rev 1.0




K7Q163654A pdf, 반도체, 판매, 대치품
K7Q163654A
K7Q161854A
512Kx36 & 1Mx18 QDRTM b4 SRAM
PIN CONFIGURATIONS(TOP VIEW) K7Q163654A(512Kx36)
1 2 3 4 5 6 7 8 9 10
A
NC VSS/SA* NC/SA*
W
BW2
K
BW1
R NC/SA* VSS/SA*
B Q27 Q18 D18 SA BW3 K BW0 SA D17 Q17
C D27 Q28 D19 VSS SA NC SA VSS D16 Q7
D D28 D20 Q19 VSS VSS VSS VSS VSS Q16 D15
E
Q29
D29
Q20
VDDQ
VSS
VSS
VSS VDDQ Q15
D6
F
Q30 Q21
D21
VDDQ
VDD
VSS
VDD
VDDQ
D14
Q14
G
D30
D22
Q22
VDDQ
VDD
VSS
VDD
VDDQ
Q13
D13
H
NC
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
J
D31
Q31
D23
VDDQ
VDD
VSS
VDD
VDDQ
D12
Q4
K
Q32
D32
Q23
VDDQ
VDD
VSS
VDD
VDDQ
Q12
D3
L
Q33
Q24
D24
VDDQ
VSS
VSS
VSS
VDDQ
D11
Q11
M D33 Q34 D25 VSS VSS VSS VSS VSS D10 Q1
N D34 D26 Q25 VSS
SA
SA
SA
VSS Q10
D9
P Q35 D35 Q26
SA
SA
C
SA SA Q9 D0
R TDO TCK
SA
SA
SA
C
SA SA SA TMS
Notes: 1. * Checked pins are reserved for higher density address, i.e. 9A for 32Mb, 3A for 64Mb, 10A for 128Mb and 2A for 256Mb.
2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, BW2 controls write to D18:D26 and BW3 controls write to D27:D35.
PIN NAME
11
NC
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
SYMBOL
K, K
C, C
SA
D0-35
PIN NUMBERS
6B, 6A
6P, 6R
4B,8B,5C,7C,5N-7N,4P,5P,7P,8P,3R-5R,7R-9R
10P,11N,11M,10K,11J,11G,10E,11D,11C,10N,9M,9L
9J,10G,9F,10D,9C,9B,3B,3C,2D,3F,2G,3J,3L,3M,2N
1C,1D,2E,1G,1J,2K,1M,1N,2P
DESCRIPTION
Input Clock
Input Clocks for Output data
Address Inputs
Data Inputs
NOTES
1
Q0-35
11P,10M,11L,11K,10J,11F,11E,10C,11B,9P,9N,10L
9K,9G,10F,9E,9D,10B,2B,3D,3E,2F,3G,3K,2L,3N
3P,1B,2C,1E,1F,2J,1K,1L,2M,1P
Data Outputs
W
R
BW0, BW1,BW2, BW3
VREF
ZQ
VDD
VDDQ
VSS
4A
8A
7B,7A,5A,5B
2H,10H
11H
5F,7F,5G,7G,5H,7H,5J,7J,5K,7K
4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L
2A,10A,4C,8C,4D-8D,5E-7E,
6F,6G,6H,6J,6K,5L-7L,
Write Control Pin
Read Control Pin
Byte Write Control Pin
Input Reference Voltage
Output Driver Impedance Control
Power Supply ( 2.5V )
Output Power Supply( 1.5V or 1.8V )
Ground
2
TMS
10R JTAG Test Mode Select
TDI 11R JTAG Test Data Input
TCK
2R
JTAG Test Clock
TDO
1R JTAG Test Data Output
NC 1A,3A,9A,11A,6C,1H
No Connect
3
Notes: 1. C, C, K or K cannot be set to VREF voltage.
2. When ZQ pin is directly connected to VDD output impedance is set to minimum value and it cannot be connected to ground or left unconnected.
3. Not connected to chip pad internally.
- 4 - July. 2002
Rev 1.0

4페이지










K7Q163654A 전자부품, 판매, 대치품
K7Q163654A
K7Q161854A
512Kx36 & 1Mx18 QDRTM b4 SRAM
STATE DIAGRAM
POWER-UP
READ NOP
READ
WRITE
WRITE NOP
READ
READ
D count=2
LOAD NEW
READ ADDRESS
D count=0
ALWAYS
READ
D count=2
DDR READ
D count=D count+1
READ
D count=1
ALWAYS
INCREMENT
READ ADDRESS
WRITE
LOAD NEW
WRITE ADDRESS
D count=0
WRITE
D count=2
ALWAYS
WRITE
D count=2
DDR WRITE
D count=D count+1
ALWAYS
WRITE
D count=1
INCREMENT
WRITE ADDRESS
Notes: 1. Internal burst counter is fixed as 2-bit linear, i.e. when first address is A0+0, next internal burst address is A0+1.
2. "READ" refers to read active status with R=Low, "READ" refers to read inactive status with R=high. "WRITE" and "WRITE" are the same case.
3. Read and write state machine can be active simultaneously.
4. State machine control timing sequence is controlled by K.
- 7 - July. 2002
Rev 1.0

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부품번호상세설명 및 기능제조사
K7Q163654A

(K7Q161854A / K7Q163654A) 1Mx18-bit QDR SRAM

Samsung semiconductor
Samsung semiconductor

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