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PDF STB16NK65Z-S Data sheet ( Hoja de datos )

Número de pieza STB16NK65Z-S
Descripción N-CHANNEL MOSFET
Fabricantes ST Microelectronics　
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STB16NK65Z-S Hoja de datos, Descripción, Manual

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STP16NK65Z
STB16NK65Z-S
N-CHANNEL 650V - 0.38Ω - 13A TO-220 / I2SPAK
Zener - Protected SuperMESH™ MOSFET
Table 1: General Features
TYPE
VDSS RDS(on)
ID
Pw
STP16NK65Z 650 V < 0.50 Ω 13 A 190 W
STB16NK65Z-S 650 V < 0.50 Ω 13 A 190 W
s TYPICAL RDS(on) = 0.38Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
stripbased PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capabil-
ity for the most demanding applications. Such se-
ries complements ST full range of high voltage
MOSFETs including revolutionary MDmesh™
products.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES
Figure 1: Package
3
2
1
TO-220
123
I²SPAK
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
SALES TYPE
STP16NK65Z
STB16NK65Z-S
MARKING
P16NK65Z
B16NK65Z
PACKAGE
TO-220
I²SPAK
PACKAGING
TUBE
TUBE
September 2005
Rev. 3
1/12

1 page




STB16NK65Z-S pdf
STP16NK65Z - STB16NK65Z-S
Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 11: Dource-Drain Diode Forward Char-
acteristics
Figure 14: Normalized BVdss vs Temperature
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STB16NK65Z-S arduino
Table 10: Revision History
Date
06-Aug-2004
02-Sep-2004
06-Sep-2005
Revision
1
2
3
STP16NK65Z - STB16NK65Z-S
Description of Changes
First Release.
Complete Version
Inserted Ecopack indication
11/12

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