(PDF) 2STW1695 Datasheet - High Power PNP Epitaxial Planar Bipolar Transistor

Número de pieza	2STW1695
Descripción	High Power PNP Epitaxial Planar Bipolar Transistor
Fabricantes	ST Microelectronics
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No Preview Available ! www.DataSheet4U.com 2STW1695 High power PNP epitaxial planar bipolar transistor General features ■ High breakdown voltage VCEO = -140V ■ Complementary to 2STW4468 ■ Typical ft =20MHz ■ Fully characterized at 125 oC ■ In compliance with the 2002/93/EC European Directive Applications ■ Audio power amplifier Description The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage. 3 2 1 TO-247 Internal schematic diagram Order codes Part Number 2STW1695 Marking 2STW1695 Package TO-247 Packing Tube February 2007 Rev 3 1/9 www.st.com 9 1 page www.DataSheet4U.com 2STW1695 1.2 Test circuit Figure 7. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor Electrical characteristics 5/9 5 Page

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PDF 2STW1695 Data sheet ( Hoja de datos )