(PDF) 2STW4468 Datasheet - High Power NPN Epitaxial Planar Bipolar Transistor

Número de pieza	2STW4468
Descripción	High Power NPN Epitaxial Planar Bipolar Transistor
Fabricantes	ST Microelectronics
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No Preview Available ! www.DataSheet4U.com 2STW4468 High power NPN epitaxial planar bipolar transistor General features ■ High breakdown voltage VCEO=140V ■ Complementary to 2STW1695 ■ Fast-switching speed ■ Typical ft =20MHz ■ Fully characterized at 125 oC ■ In compliance with the 2002/93/EC European Directive Applications ■ Audio power amplifier Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage. 3 2 1 TO-247 Internal schematic diagram Order codes Part Number 2STW4468 Marking 2STW4468 Package TO-247 Packing Tube February 2007 Rev 3 1/9 www.st.com 9 1 page www.DataSheet4U.com 2STW4468 1.2 Test circuit Figure 7. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor Electrical characteristics 5/9 5 Page

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PDF 2STW4468 Data sheet ( Hoja de datos )