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Número de pieza | STU60N55F3 | |
Descripción | N-CHANNEL Power MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STU60N55F3 (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
No Preview Available ! STB60N55F3 - STD60N55F3 - STF60N55F3
STP60N55F3 - STU60N55F3
N-channel 55V - 8.0mΩ - 65A - DPAK - IPAK - D2PAK - TO-220/FP
STripFET™Power MOSFET
General features
Type
STB60N55F3
STD60N55F3
STF60N55F3
STP60N55F3
STU60N55F3
VDSS
55V
55V
55V
55V
55V
RDS(on)
<10.5mΩ
<10.5mΩ
<10.5mΩ
<10.5mΩ
<10.5mΩ
ID Pw
65A 110W
65A 110W
30A 30W
65A 110W
65A 110W
■ Standard threshold drive
■ 100% avalanche tested
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics' unique “Single Feature
Size™“ strip-based process, which has
decreased the critical alignment steps, offering
remarkable manufacturing reproducibility. The
outcome is a transistor with extremely high
packing density for low onresistance, rugged
avalanche characteristics and low gate charge.
Applications
■ Switching application
3
2
1
TO-220FP
3
1
D²PAK
3
1
DPAK
3
2
1
IPAK
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STB60N55F3
STD60N55F3
STF60N55F3
STP60N55F3
STU60N55F3
Marking
60N55F3
60N55F3
60N55F3
60N55F3
60N55F3
Package
D²PAK
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape & reel
Tape & reel
Tube
Tube
Tube
February 2007
Rev 2
1/19
www.st.com
19
1 page STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 Electrical characteristics
Table 5. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
VDD = 27V, ID = 32A,
RG = 4.7Ω, VGS = 10V
(see Figure 17)
VDD = 27V, ID = 32A,
RG = 4.7Ω, VGS = 10V
(see Figure 17)
Min. Typ. Max. Unit
20 ns
50 ns
35 ns
11.5 ns
Table 6.
Symbol
Source drain diode
Parameter
Test conditions
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
VSD Forward on voltage
ISD = 65A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 65A, VDD = 30V
di/dt = 100A/µs,
Tj = 150°C
(see Figure 16)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
65 A
260 A
1.5 V
47 ns
87 nC
3.7 A
5/19
5 Page STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3Package mechanical data
DIM.
A
A1
A2
B
b4
C
C2
D
D1
E
E1
e
e1
H
L
(L1)
L2
L4
R
V2
MIN.
2.2
0.9
0.03
0.64
5.2
0.45
0.48
6
6.4
4.4
9.35
1
0.6
0°
DPAK MECHANICAL DATA
mm.
TYP
5.1
4.7
2.28
2.8
0.8
0.2
MAX.
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
6.6
4.6
10.1
1
8°
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
0.039
0.023
0°
inch
TYP.
0.200
0.185
0.090
0.110
0.031
0.008
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
0.039
8°
0068772-F
11/19
11 Page |
Páginas | Total 19 Páginas | |
PDF Descargar | [ Datasheet STU60N55F3.PDF ] |
Número de pieza | Descripción | Fabricantes |
STU60N55F3 | N-CHANNEL Power MOSFET | ST Microelectronics |
STU60N55F3 | N-channel Power MOSFET | STMicroelectronics |
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