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PDF STU60N55F3 Data sheet ( Hoja de datos )

Número de pieza STU60N55F3
Descripción N-CHANNEL Power MOSFET
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STU60N55F3 Hoja de datos, Descripción, Manual

STB60N55F3 - STD60N55F3 - STF60N55F3
STP60N55F3 - STU60N55F3
N-channel 55V - 8.0m- 65A - DPAK - IPAK - D2PAK - TO-220/FP
STripFET™Power MOSFET
General features
Type
STB60N55F3
STD60N55F3
STF60N55F3
STP60N55F3
STU60N55F3
VDSS
55V
55V
55V
55V
55V
RDS(on)
<10.5m
<10.5m
<10.5m
<10.5m
<10.5m
ID Pw
65A 110W
65A 110W
30A 30W
65A 110W
65A 110W
Standard threshold drive
100% avalanche tested
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics' unique “Single Feature
Size™“ strip-based process, which has
decreased the critical alignment steps, offering
remarkable manufacturing reproducibility. The
outcome is a transistor with extremely high
packing density for low onresistance, rugged
avalanche characteristics and low gate charge.
Applications
Switching application
3
2
1
TO-220FP
3
1
D²PAK
3
1
DPAK
3
2
1
IPAK
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STB60N55F3
STD60N55F3
STF60N55F3
STP60N55F3
STU60N55F3
Marking
60N55F3
60N55F3
60N55F3
60N55F3
60N55F3
Package
D²PAK
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape & reel
Tape & reel
Tube
Tube
Tube
February 2007
Rev 2
1/19
www.st.com
19

1 page




STU60N55F3 pdf
STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 Electrical characteristics
Table 5. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
VDD = 27V, ID = 32A,
RG = 4.7Ω, VGS = 10V
(see Figure 17)
VDD = 27V, ID = 32A,
RG = 4.7Ω, VGS = 10V
(see Figure 17)
Min. Typ. Max. Unit
20 ns
50 ns
35 ns
11.5 ns
Table 6.
Symbol
Source drain diode
Parameter
Test conditions
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
VSD Forward on voltage
ISD = 65A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 65A, VDD = 30V
di/dt = 100A/µs,
Tj = 150°C
(see Figure 16)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
65 A
260 A
1.5 V
47 ns
87 nC
3.7 A
5/19

5 Page





STU60N55F3 arduino
STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3Package mechanical data
DIM.
A
A1
A2
B
b4
C
C2
D
D1
E
E1
e
e1
H
L
(L1)
L2
L4
R
V2
MIN.
2.2
0.9
0.03
0.64
5.2
0.45
0.48
6
6.4
4.4
9.35
1
0.6
DPAK MECHANICAL DATA
mm.
TYP
5.1
4.7
2.28
2.8
0.8
0.2
MAX.
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
6.6
4.6
10.1
1
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
0.039
0.023
inch
TYP.
0.200
0.185
0.090
0.110
0.031
0.008
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
0.039
0068772-F
11/19

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