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부품번호 | STP135N10 기능 |
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기능 | N-channel Power MOSFET | ||
제조업체 | ST Microelectronics | ||
로고 | |||
www.DataSheet4U.com
STB135N10
STP135N10
N-CHANNEL 100V - 0.007 Ω - 135A D²PAK/TO-220
LOW GATE CHARGE STripFET™ POWER MOSFET
TARGET DATA
TYPE
VDSS
RDS(on)
ID
STB135N10
STP135N10
100 V
100 V
<0.009 Ω 135 A(*)
<0.009 Ω 135 A(*)
s TYPICAL RDS(on) = 0.007Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
DESCRIPTION
This MOSFET is the result of STMicroelectronics’s well
established and consolidated STripFET technology utiliz-
ing the most recent layout optimization. The device exhib-
its extremely low on-resistance, gate charge and diode’s
reverse recovery charge Qrr making it the ideal switch in
a very large spectrum of applications such as Automotive,
Consumer, Telecom and Industrial.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s PRIMARY SWITCH IN TELECOM DC-DC
CONVERTER
s HIGH-EFFICIENCY DC-DC CONVERTERS
s 42V AUTOMOTIVE APPLICATIONS
s SYNCHRONOUS RECTIFICATION
s DIESEL INJECTION
s PWM UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID(*) Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(1)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (2) Peak Diode Recovery voltage slope
EAS (3) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(1) Pulse width limited by safe operating area.
(*) Value limited by wire bonding
Value
100
100
± 20
135
96
540
150
1
TBD
TBD
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(2) ISD ≤ 40A, di/dt ≤ 600A/µs, VDD ≤BVDSS, Tj ≤ TJMAX.
(3) Starting Tj = 25 oC, ID = 40A, VDD = 50V
July 2003
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
1/8
STB135N10 STP135N10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/8
4페이지 STB135N10 STP135N10
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5
0.059
C 12.8 13.2 0.504 0.520
D 20.2
0.795
G 24.4 26.4 0.960 1.039
N 100
3.937
T 30.4 1.197
TAPE MECHANICAL DATA
DIM.
mm
MIN. MAX.
inch
MIN. MAX.
A0
10.5
10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1
1.59
1.61 0.062 0.063
E
1.65
1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082
R 50
1.574
T
0.25
0.35 .0.0098 0.0137
W 23.7 24.3 0.933 0.956
BASE QTY
1000
BULK QTY
1000
* on sales type
7/8
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ STP135N10.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
STP135N10 | N-channel Power MOSFET | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |