STU95N4F3 Datasheet PDF - ST Microelectronics
| Part Number | STU95N4F3 | |
| Description | N-channel Power MOSFET | |
| Manufacturers | ST Microelectronics | |
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STD95N4F3
STP95N4F3 - STU95N4F3
N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK
STripFET™ Power MOSFET
General features
Type
STD95N4F3
STP95N4F3
STU95N4F3
VDSS
40V
40V
40V
RDS(on)
<6.5mΩ
<6.5mΩ
<6.5mΩ
■ Standard threshold drive
■ 100% avalanche tested
ID Pw
80A 110W
80A 110W
80A 110W
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique “Single Feature
Size™“strip-based process with less critical
alignment steps and therefore a remarkable
manufacturing reproducibility. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and low gate charge.
Applications
■ Switching application
3
1
DPAK
3
2
1
TO-220
IPAK
3
2
1
Internal schematic diagram
Order codes
Part number
STD95N4F3
STP95N4F3
STU95N4F3
Marking
95N4F3
95N4F3
95N4F3
Package
DPAK
TO-220
IPAK
Packaging
Tape & reel
Tube
Tube
February 2007
Rev 1
1/14
www.st.com
14
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STD95N4F3 - STP95N4F3 - STU95N4F3
Electrical characteristics
Table 5. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
VDD=20V, ID= 40A,
RG=4.7Ω, VGS=10V
(see Figure 15)
VDD=20V, ID= 40A,
RG=4.7Ω, VGS=10V
(see Figure 15)
Min. Typ. Max. Unit
15 ns
50 ns
40 ns
15 ns
Table 6.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80A, VGS=0
ISD=80A,
di/dt = 100A/µs,
VDD=30V, Tj=150°C
(see Figure 14)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
320 A
1.5 V
45 ns
60 nC
2.8 A
5/14
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