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PDF STP130NS04ZB Data sheet ( Hoja de datos )
| Número de pieza | STP130NS04ZB | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STP130NS04ZB
STB130NS04ZB - STW130NS04ZB
N-CHANNEL CLAMPED - 7 mΩ - 80A TO-220/D²PAK/TO-247
FULLY PROTECTED MESH OVERLAY™ MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STP130NS04ZB
STB130NS04ZB
STW130NS04ZB
CLAMPED
CLAMPED
CLAMPED
< 9 mΩ
< 9 mΩ
< 9 mΩ
80 A
80 A
80 A
s TYPICAL RDS(on) = 7 mΩ
s 100% AVALANCHE TESTED
s LOW CAPACITANCE AND GATE CHARGE
s 175°C MAXIMUM JUNCTION TEMPERATURE
DESCRIPTION
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of the new technology cou-
pled with the extra clamping capabilities make this
product particularly suitable for the harshest oper-
ation conditions such as those encountered in the
automotive environment .Any other application re-
quiring extra ruggedness is also recommended.
Figure 1: Package
3
2
1
TO-220
3
1
D²PAK
3
2
1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
s HIGH SWITCHING CURRENT
s LINEAR APPLICATIONS
Table 2: Order Codes
Sales Type
STP130NS04ZB
STB130NS04ZBT4
STW130NS04ZB
Marking
P130NS04ZB
B130NS04ZB
W130NS04ZB
Package
TO-220
D²PAK
TO-247
February 2005
Packaging
TUBE
TAPE & REEL
TUBE
Rev. 2
1/12
1 page  
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Figure 9: Gate Charge vs Gate-source Voltage
Figure 12: Normalized On Resistance vs Tem-
perature
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Source-drain Diode Forward Char-
acteristics
Figure 11: Capacitance Variations
Figure 14: Normalized BVDSS vs Temperature
5/12
5 Page 
Table 9: Revision History
Date
10-June-2004
14-Jan-2005
Revision
1
2
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Description of Changes
First Release.
Inserted D²PAK, Complete version.
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STP130NS04ZB.PDF ] | |
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