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부품번호 | STP120NH03L 기능 |
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기능 | N-CHANNEL POWER MOSFET | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 17 페이지수
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STB120NH03L - STI120NH03L
STP120NH03L
N-channel 30V - 0.005Ω - 60A - TO-220 / D2PAK / I2PAK
STripFET™ Power MOSFET for DC-DC conversion
General features
Type
STB120NH03L
STP120NH03L
STI120NH03L
VDSS
30V
30V
30V
RDS(on)
<0.0055Ω
<0.0055Ω
<0.0055Ω
ID
60(1)
60(1)
60(1)
1. Value limited by wire bonding
■ RDS(on) *Qg industry’s benchmark Low
■ Conduction losses reduced
■ Switching losses reduced
■ Low Threshold device
Description
These devices utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
It is ideal in high performance DC-DC converter
applications where efficiency is to be achieved at
very high output currents.
Applications
■ Switching application
3
2
1
TO-220
3
1
D2PAK
123
I2PAK
Internal schematic diagram
Order codes
Part number
STB120NH03L
STI120NH03L
STP120NH03L
Marking
B120NH03L
120NH03L
P120NH03L
Package
D2PAK
I²PAK
TO-220
Packaging
Tape & reel
Tube
Tube
February 2007
Rev 7
1/17
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17
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Electrical characteristics
STB120NH03L - STI120NH03L - STP120NH03L
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
TC=125°C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 30A
VGS = 5V, ID = 30A
Min. Typ. Max. Unit
30 V
1 µA
10 µA
±100 µA
1 1.8 3 V
0.005 0.0055 Ω
0.006 0.0105 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off voltage rise time
Fall time
Rg Gate input resistance
VDD = 15V, ID = 30A,
RG = 4.7Ω, VGS = 10V
(see Figure 12)
f = 1MHz gate DC bias=0
test signal level=20mV
open drain
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=15V, ID = 60A
VGS =10V
(see Figure 13)
Qoss (1) Output charge
VDS = 24V, VGS = 0
Qgls (2)
Third-quadrant gate
charge
VDS < 0, VGS= 0V
1. Qoss = Coss* ∆VIN, Coss = Cgd + Cds. See power losses calculation
2. Gate charge for synchronous operation.
Min.
Typ.
4100
680
70
16
95
48
23
1.3
57
12
7
27
55
Max.
77
Unit
pF
pF
pF
ns
ns
ns
ns
Ω
nC
nC
nC
ns
ns
4/17
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STB120NH03L - STI120NH03L - STP120NH03L
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
7/17
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부품번호 | 상세설명 및 기능 | 제조사 |
STP120NH03L | N-CHANNEL POWER MOSFET | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |