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PDF FGL40N120AND Data sheet ( Hoja de datos )
| Número de pieza | FGL40N120AND | |
| Descripción | 1200V NPT IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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February 2008
FGL40N120AND
1200V NPT IGBT
tm
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 75ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.
Description
Employing NPT technology, Fairchild’s AND series of IGBTs
provides low conduction and switching losses. The AND series
offers an solution for application such as induction heating (IH),
motor control, general purpose inverters and uninterruptible
power supplies (UPS).
GC E
TO-264
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGES
IC
ICM(1)
IF
IFM
PD
SCWT
TJ
TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@TC = 25°C
@TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time,
VCE = 600V, VGE = 15V, TC = 125°C
Operating Junction Temperature
@TC = 25°C
@TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 seconds
Notes:
(1) Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2008 Fairchild Semiconductor Corporation
FGL40N120AND Rev. A2
1
C
G
E
FGL40N120AND
1200
±25
64
40
160
40
240
500
200
10
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
µs
°C
°C
°C
Typ.
--
--
--
Max.
0.25
0.7
25
Units
°C/W
°C/W
°C/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
6000
5000
4000
3000
Ciss
Common Emitter
V = 0V, f = 1MHz
GE
T = 25°C
C
Figure 8. Turn-On Characteristics vs. Gate
Resistance
100
tr
2000
1000
Coss
Crss
0
1 10
Collector-Emitter Voltage, V [V]
CE
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
10
0
td(on)
Common Emitter
V = 600V, V = ±15V
CC GE
I = 40A
C
T = 25°C
C
T = 125°C
C
10 20 30 40 50 60 70
Gate Resistance, R [Ω]
G
Figure 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V = 600V, V = ±15V, I = 40A
CC GE C
T = 25°C
C
T = 125°C
C
td(off)
Common Emitter
V = 600V, V = ±15V
CC GE
I = 40A
C
10
T = 25°C
C
T = 125°C
C
Eon
100
tf
Eoff
1
10
0
10 20 30 40 50 60 70
Gate Resistance, R [Ω]
G
Figure 11. Turn-On Characteristics vs.
Collector Current
0 10 20 30 40 50 60 70
Gate Resistance, R [Ω]
G
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
V = ±15V, R = 5Ω
GE G
100
T = 25°C
C
T = 125°C
C
tr
Common Emitter
V = ±15V, R = 5Ω
GE G
T = 25°C
C
T = 125°C
C
td(off)
100
td(on)
10
tf
20 30 40 50 60 70 80
Collector Current, I [A]
C
20 30 40 50 60 70 80
Collector Current, I [A]
C
FGL40N120AND Rev. A2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGL40N120AND.PDF ] | |
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