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PDF FGL40N120AN Data sheet ( Hoja de datos )
| Número de pieza | FGL40N120AN | |
| Descripción | 1200V NPT IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGL40N120AN
1200V NPT IGBT
July 2007
IGBT®
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A
• High input impedance
Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.
Description
Employing NPT technology, Fairchild’s AN series of IGBTs pro-
vides low conduction and switching losses. The AN series offers
an solution for application such as induction heating (IH), motor
control, general purpose inverters and uninterruptible power
supplies (UPS).
GC E
TO-264
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGES
IC
ICM(1)
PD
SCWT
TJ
TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@TC = 25°C
@TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time,
VCE = 600V, VGE = 15V, TC = 125°C
Operating Junction Temperature
@TC = 25°C
@TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 seconds
Notes:
(1) Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
FGL40N120AN
1200
±25
64
40
160
500
200
10
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
µs
°C
°C
°C
Typ.
--
--
Max.
0.25
25
Units
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FGL40N120AN Rev. A1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Common Emitter
V = ±15V, R = 5Ω
GE G
10
T = 25°C
C
T = 125°C
C
Eon
Eoff
1
0.1
20 30 40 50 60 70
Collector Current, I [A]
C
Figure 15. SOA Characteristics
80
Figure 14. Gate Charge Characteristics
16
Common Emitter
14
R = 15Ω
L
T = 25°C
C
12
Vcc = 200V
600V
10
400V
8
6
4
2
0
0 50 100 150
Gate Charge, Q [nC]
g
Figure 16. Turn-Off SOA
200
250
Ic MAX (Pulsed)
100 Ic MAX (Continuous)
10
1
50µs
100µs
1ms
DC Operation
100
10
Single Nonrepetitive
0.1 Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1 1 10
100
Collector - Emitter Voltage, V [V]
CE
1000
Safe Operating Area
V = 15V, T = 125oC
GE C
1
1 10 100
Collector-Emitter Voltage, V [V]
CE
Figure 17. Transient Thermal Impedance of IGBT
1000
1
0.1 0.5
0.01
0.2
0.1
0.05
0.02
0.01
1E-3
1E-5
single pulse
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
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1 10
FGL40N120AN Rev. A1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FGL40N120AN.PDF ] | |
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