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PDF MW5IC970NBR1 Data sheet ( Hoja de datos )
| Número de pieza | MW5IC970NBR1 | |
| Descripción | RF LDMOS Wideband 2-Stage Power Amplifiers | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF LDMOS Wideband 2 - Stage
Power Amplifiers
Designed for broadband commercial and industrial applications with frequen-
cies from 132 MHz to 960 MHz. The high gain and broadband performance of
this device make it ideal for large - signal, common - source amplifier applica-
tions in 28 volt base station equipment. The device has a 2 - stage design with
off - chip matching for the input, interstage and output networks to cover the
desired frequency band.
•
Typical Performance: 800 MHz,
IDQP2o=w6e5r0GmaiAn,—Po3ut0=d7B0 Watts
28 Volts,
PEP
IDQ1
=
80
mA,
Drain Efficiency — 48%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 70 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MW5IC970NBR1
Rev. 0, 4/2006
MW5IC970NBR1
800 - 900 MHz, 70 W, 28 V
RF LDMOS WIDEBAND
2 - STAGE POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
VRD2
VRG2/VGS2
VRG1/VGS1
RFin1
VRD1
VD1/RFout1
VD1/RFout1
RFin2
Quiescent Current
Temperature Compensation
VD2/RFout2
Figure 1. Functional Block Diagram
GND
VRD2
VRG2/VGS2
VRG1/VGS1
RFin1
GND
VRD1
VD1/RFout1
VD1/RFout1
RFin2
GND
1
2
3
4
5
6
7
8
9
10
11
16 GND
15 NC
14
VD2/
RFout2
13 NC
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW5IC970NBR1
1
1 page  
TYPICAL CHARACTERISTICS
60
PAE
40
60
40
20
VDD = 28.5 Vdc, Pout = 35 W (Avg.)
IDQ1 = 80 mA, IDQ2 = 650 mA
0 100 kHz Tone Spacing
Gps
20
0
IRL
−20 −20
IMD
−40 −40
800 820 840 860 880 900 920 940 960
f, FREQUENCY (MHz)
Figure 5. Two - Tone Wideband Performance
@ Pout = 35 Watts (Avg.)
32
IDQ2 = 975 mA
31 812 mA
650 mA
30
488 mA
29
28 325 mA
27
1
VDD = 28.5 Vdc, IDQ1 = 80 mA
f1 = 870 MHz, f2 = 870.1 MHz
Two−Tone Measurements
100 kHz Tone Spacing
10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Two - Tone Power Gain versus
Output Power
200
−10
VDD = 28.5 Vdc
−20
IDQ1 = 80 mA, IDQ2 = 650 mA
f1 = 870 MHz, f2 = 870.1 MHz
Two−Tone Measurements
−30 100 kHz Tone Spacing
3rd Order
−40
−50
5th Order
−60
7th Order
−70
1
10 100 300
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
−20
−25
−30
3rd Order
−35
VDD = 28.5 Vdc, Pout = 35 W (PEP)
IDQ1 = 80 mA, IDQ2 = 650 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 870 MHz
−40 5th Order
−45 7th Order
−50
−55
0.1 1 10 100 200
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
34
VDD = 28.5 Vdc, IDQ1 = 80 mA
32 IDQ2 = 650 mA, f = 870 MHz
30
28 TC = 25_C
Gps
−30_C
−30_C
70
25_C 60
85_C
50
40
26 85_C
30
24
PAE
22
20
10
20 0
0.1 1 10 100 1000
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Power Added
Efficiency versus CW Output Power
RF Device Data
Freescale Semiconductor
MW5IC970NBR1
5
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