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Número de pieza | MW6IC2015NBR1 | |
Descripción | RF LDMOS Wideband Integrated Power Amplifiers | |
Fabricantes | Freescale Semiconductor | |
Logotipo | ||
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Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW6IC2015N wideband integrated circuit is designed for base station
applications. It uses Freescale’s newest High Voltage (26 to 32 Volts) LDMOS
IC technology and integrates a multi - stage structure. Its wideband on - chip
design makes it usable from 1805 to 1990 MHz. The linearity performances
cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS,
TDMA, CDMA, W - CDMA and TD - SCDMA.
Final Application
• Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 100 mA, IDQ2 =
1197300m- A19, 9P0ouMt =Hz1)5 Watts PEP, Full Frequency Band (1805 - 1880 MHz or
Power Gain — 26 dB
Power Added Efficiency — 28%
IMD — - 30 dBc
Driver Application
• T1197yp30i0cma- A1l 9G, 9PS0oMuMt E=HDz3)GWEaPttesrAfovrgm.,aFncuell:FVreDqDu=en2c6yVBoaltnsd, I(D1Q810=5 -1138080mAM,HIDzQo2r =
Power Gain — 27 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = - 69 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 0.8% rms
• Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 15 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW
Pout.
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VDS1
RFin
VGS1
VGS2
Quiescent Current
Temperature Compensation
RFout/VDS2
Figure 1. Functional Block Diagram
Document Number: MW6IC2015N
Rev. 2, 2/2007
MW6IC2015NBR1
MW6IC2015GNBR1
1805 - 1990 MHz, 15 W, 26 V
GSM/GSM EDGE, CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW6IC2015NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW6IC2015GNBR1
GND 1
VDS1
NC
2
3
NC 4
NC 5
16 GND
15 NC
RFin
NC
VGS1
VGS2
NC
GND
6
7
8
9
10
11
14 RFout /
VDS2
13 NC
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6IC2015NBR1 MW6IC2015GNBR1
1
1 page VDD1
MW6IC2015, Rev. 0
C2 C3
VDD2
C14
R1
VGG1
C15
R2
VGG2
C1
C6
C9
C7
C11
C8
C10
C12 C13
C4
C5
Figure 4. MW6IC2015NBR1(GNBR1) Test Circuit Component Layout — 1930 - 1990 MHz
RF Device Data
Freescale Semiconductor
MW6IC2015NBR1 MW6IC2015GNBR1
5
5 Page VDD2
VDD1
RF
INPUT
Z1
Z2
C6
C1
Z3
1
2
3 NC
4 NC
5 NC
6
7 NC
DUT 16
NC 15
C2
Z9
C3
14 Z4
C7 C9
Z5
Z6
Z7
RF
OUTPUT
Z8
C11
C8 C10
C16 C12 C13
VGG1
VGG2
R1
C14
R2
8 Quiescent Current
9 Temperature Compensation
10 NC
NC 13
11 12
Z10
C4 C5
C15
Z1* 1.64″ x 0.08″ Microstrip
Z2 0.54″ x 0.08″ Microstrip
Z3 0.15″ x 0.04″ Microstrip
Z4 0.13″ x 0.35″ Microstrip
Z5 0.10″ x 0.35″ Microstrip
Z6* 0.26″ x 0.04″ Microstrip
Z7*
Z8
Z9, Z10
PCB
0.41″ x 0.04″ Microstrip
1.18″ x 0.04″ Microstrip
1.18″ x 0.08″ Microstrip
Taconic TLX8 - 0300, 0.030″, εr = 2.55
* Variable for tuning.
Figure 21. MW6IC2015NBR1(GNBR1) Test Circuit Schematic — 1805 - 1880 MHz
Table 7. MW6IC2015NBR1(GNBR1) Test Circuit Component Designations and Values — 1805 - 1880 MHz
Part
Description
Part Number
Manufacturer
C1, C14, C15
2.2 μF Chip Capacitors
C3225X5R1H225MT
TDK
C2, C4, C11
5.6 pF Chip Capacitors
ATC100B5R6CT500XT
ATC
C3, C5
10 μF Chip Capacitors
C5750X5R1H106MT
TDK
C6
1.5 pF Chip Capacitor
ATC100A1R5BT500XT
ATC
C7, C8
2.7 pF Chip Capacitors
ATC100B2R7BT500XT
ATC
C9, C10, C12
0.8 pF Chip Capacitors
ATC100B0R8BT500XT
ATC
C13
0.1 pF Chip Capacitor
ATC100B0R1BT500XT
ATC
C16
1 pF Chip Capacitor
ATC100B1R0BT500XT
ATC
R1
10 kΩ, 1/4 W Chip Resistor
CRCW12061001FKTA
Vishay
R2
18 Ω, 1/4 W Chip Resistor
CRCW120618R0FKTA
Vishay
RF Device Data
Freescale Semiconductor
MW6IC2015NBR1 MW6IC2015GNBR1
11
11 Page |
Páginas | Total 28 Páginas | |
PDF Descargar | [ Datasheet MW6IC2015NBR1.PDF ] |
Número de pieza | Descripción | Fabricantes |
MW6IC2015NBR1 | RF LDMOS Wideband Integrated Power Amplifiers | Freescale Semiconductor |
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