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부품번호 | STP100NF03L-03 기능 |
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기능 | N-channel Power MOSFET | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 15 페이지수
www.DataSheet4U.com
STP100NF03L-03
STB100NF03L-03 STB100NF03L-03-1
N-channel 30V - 0.0026Ω - 100A - D2PAK/I2/TO-220
STripFET™ III Power MOSFET
General features
Type
STB100NF03L-03
STB100NF03L-03-1
STP100NF03L-03
VDSS
30V
30V
30V
■ Low threshold drive
■ 100% avalanche tested
■ Logic level device
RDS(on)
<0.0032Ω
<0.0032Ω
<0.0032Ω
ID
100A
100A
100A
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
■ Switching application
3
2
1
TO-220
3
1
D2PAK
123
I2PAK
Internal schematic diagram
Order codes
Part number
STB100NF03L-03T4
STB100NF03L-03-1
STP100NF03L-03
Marking
B100NF03L
B100NF03L
P100NF03L
Package
D2PAK
I2PAK
TO-220
Packaging
Tape & reel
Tube
Tube
June 2006
Rev 2
1/15
www.st.com
15
Electrical characteristics
STB100NF03L-03 - STB100NF03L-03-1 - STP100NF03L-03
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250µA, VGS =0
VDS = max ratings
VDS = max ratings,
TC = 125°C
VGS = ± 16V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
30 V
1 µA
10 µA
±100 nA
1
1.7 2.5
V
0.0026 0.0032
0.0032 0.0045
Ω
Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
Min.
gfs (1)
Ciss
Coss
Crss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS>ID(on)xRDS(on)max ,
ID = 30A
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 15V, ID = 50A
RG = 4.7Ω VGS = 4.5V
(see Figure 13)
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 24V, ID = 100A,
VGS = 5V
(see Figure 14)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
10
Typ.
6200
1720
300
35
315
115
95
88
22.5
36
Max.
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
4/15
4페이지 STB100NF03L-03 - STB100NF03L-03-1 - STP100NF03L-03
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Normalized BVDSS vs temperature
7/15
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부품번호 | 상세설명 및 기능 | 제조사 |
STP100NF03L-03 | N-channel Power MOSFET | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |