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PDF MRFG35010ANT1 Data sheet ( Hoja de datos )
| Número de pieza | MRFG35010ANT1 | |
| Descripción | Gallium Arsenide PHEMT | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
•
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=
MHz,
Power Gain — 10 dB
Efficiency — 25%
ACPR @ 5 MHz Offset — - 43 dBc in 3.84 MHz Channel Bandwidth
• 9 Watts P1dB @ 3550 MHz, CW
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MRFG35010AN
Rev. 0, 5/2006
MRFG35010ANT1
3.5 GHz, 9 W, 12 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature (1)
Operating Case Temperature Range
Table 2. Thermal Characteristics
Characteristic
VDSS
VGS
Pin
Tstg
Tch
TC
Symbol
15
-5
33
- 65 to +150
175
- 40 to +85
Value (2)
Thermal Resistance, Junction to Case
Case Temperature 77°C, 1 W CW
RθJC
6.5
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1 260
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
dBm
°C
°C
°C
Unit
°C/W
Unit
°C
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35010ANT1
1
1 page  
TYPICAL CHARACTERISTICS
12 50
10
VDS = 12 Vdc, IDQ = 130 mA, f = 3550 MHz
8 Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
ΓS = 0.875 ∠ −131.0_
6 ΓL = 0.849 ∠ −145.8_
40
GT
30
20
4
ηD
10
20
10 15 20 25 30 35 40
Pout, OUTPUT POWER (dBm)
Figure 3. Single - Carrier W - CDMA Power Gain
and Drain Efficiency versus Output Power
−10
VDS = 12 Vdc, IDQ = 130 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
−20 ΓS = 0.875 ∠ −131.0_, ΓL = 0.849 ∠ −145.8_
IRL
−30
−10
−15
−20
−40 −25
−50 ACPR
−30
−60 −35
15 20 25 30 35 40
Pout, OUTPUT POWER (dBm)
Figure 4. Single - Carrier W - CDMA ACPR and
Input Return Loss versus Output Power
NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
RF Device Data
Freescale Semiconductor
MRFG35010ANT1
5
5 Page 
PACKAGE DIMENSIONS
A 0.146
3.71
F
0.095
2.41
3 0.115
2.92
BD
1
2R
L
0.115
2.92
ZONE V
ZONE W
4
N
K
Q
H
ÉÉÉÉÉ1 ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ4 ÉÉÉÉÉÉÉÉÉÉ2
3
G
S
ZONE X
VIEW Y - Y
0.35 (0.89) X 45_" 5_
U
C
P
Y
10_DRAFT
YE
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
CASE 466 - 03
ISSUE D
PLD- 1.5
PLASTIC
0.020
0.51
inches
mm
SOLDER FOOTPRINT
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN MAX
0.255 0.265
0.225 0.235
0.065 0.072
0.130 0.150
0.021 0.026
0.026 0.044
0.050 0.070
0.045 0.063
0.160 0.180
0.273 0.285
0.245 0.255
0.230 0.240
0.000 0.008
0.055 0.063
0.200 0.210
0.006 0.012
0.006 0.012
0.000 0.021
0.000 0.010
0.000 0.010
MILLIMETERS
MIN MAX
6.48 6.73
5.72 5.97
1.65 1.83
3.30 3.81
0.53 0.66
0.66 1.12
1.27 1.78
1.14 1.60
4.06 4.57
6.93 7.24
6.22 6.48
5.84 6.10
0.00 0.20
1.40 1.60
5.08 5.33
0.15 0.31
0.15 0.31
0.00 0.53
0.00 0.25
0.00 0.25
RF Device Data
Freescale Semiconductor
MRFG35010ANT1
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRFG35010ANT1.PDF ] | |
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