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PDF STC08IE150HV Data sheet ( Hoja de datos )

Número de pieza STC08IE150HV
Descripción Emitter Switched Bipolar Transistor
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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STC08IE150HV
Emitter Switched Bipolar Transistor
ESBT® 1500 V - 8 A - 0.10
Features
VCS(ON)
0.8 V
IC
8A
RCS(ON)
0.10 W
High voltage / high current Cascode
configuration
Low equivalent on resistance
Very fast-switch, up to 150 kHZ
Squared rbsoa, up to 1500 V
Very low CISS driven by RG = 47
Very low turn-off cross over time
In compliance with the 2002/93/EC European
Directive
PRELIMINARY DATA
234
1
TO247-4LHV
Applications
Aux SMPS for three phase mains
Sepic PFC
Internal Schematic Diagram
Description
The STC08IE150HV is manufactured in
Monolithic ESBT Technology, aimed to provide
best performance in high frequency / high voltage
applications. it is designed for use in Gate Driven
based topologies.
Order Codes
Part Number
STC08IE150HV
Marking
C08IE150HV
Package
TO247-4LHV
Packaging
TUBE
December 2006
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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www.st.com
7

1 page




STC08IE150HV pdf
STC08IE150HV
3 Package mechanical data
DIM.
A
A1
A2
b
b2
c
D
D1
E
e
e1
L
L1
L2
L3
‡P
S
TO247-4LHV MECHANICAL DATA
MIN.
4.85
2.20
0.95
2.50
0.40
23.85
15.45
2.54
5.08
10.20
2.20
3.55
mm.
TYP
2.50
1.27
1.10
24
21.50
15.60
2.50
18.50
3
5.50
MAX.
5.15
2.60
1.30
2.90
0.80
24.15
15.75
10.80
2.80
3.65
7734874
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