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부품번호 | STD55NH2LL 기능 |
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기능 | N-CHANNEL MOSFET | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 16 페이지수
www.DataSheet4U.com
STD55NH2LL
STD55NH2LL-1
N-channel 24V - 0.010Ω - 40A - DPAK/IPAK
Ultra low gate charge STripFET™ Power MOSFET
General features
Type
STD55NH2LL-1
STD55NH2LL
VDSS
24V
24V
RDS(on)
<0.011Ω
<0.011Ω
1. Value limited by wire bonding
■ RDS(ON) * Qg industry’s benchmark
■ Conduction losses reduced
■ Switching losses reduced
■ Low threshold device
ID
40A(1)
40A(1)
Description
The STD55NH2LL is based on the latest
generation of ST's proprietary STripFET™
technology. An innovative layout enables the
device to also exhibit extremely low gate charge
for the most demanding requirements as high-
side switch in high-frequency DC-DC converters.
It's therefore ideal for high-density converters in
Telecom and Computer applications.
Applications
■ Switching application
3
2
1
iPAK
3
1
DPAK
Internal schematic diagram
Order codes
Part number
STD55NH2LL-1
STD55NH2LLT4
Marking
D55NH2LL
D55NH2LL
Package
IPAK
DPAK
Packaging
Tube
Tape & reel
July 2006
Rev 5
1/16
www.st.com
16
Electrical characteristics
2 Electrical characteristics
STD55NH2LL - STD55NH2LL-1
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 25mA, VGS =0
24
V
VDS = max rating
VDS = max rating
TC = 125°C
1 µA
10 µA
VGS = ± 16V
±100 nA
VDS = VGS, ID = 250µA
1
V
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 20A
0.010 0.011
0.012 0.0135
Ω
Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
RG Gate Input Resistance
VDS = 10V, ID = 10A
VDS = 25V, f = 1MHz,
VGS = 0
f = 1 MHz Gate
DC Bias = 0 Test Signal
Level = 20 mV Open
Drain
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 10V, ID = 20A
RG = 4.7Ω VGS = 4.5V
(see Figure 13)
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
0.44V ≤VDD ≤10V,
ID = 40A,
VGS = 4.5V, RG = 4.7Ω
(see Figure 14)
Qoss(2) Output charge
VDS= 16 V, VGS= 0 V
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Chapter 4: Appendix A
Min.
Typ.
18
990
385
40
1.3
15
56
13
10
8.7
4.2
2.4
7.6
Max.
11
Unit
S
pF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
nC
4/16
4페이지 STD55NH2LL - STD55NH2LL-1
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Normalized breakdown voltage vs
temperature
7/16
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부품번호 | 상세설명 및 기능 | 제조사 |
STD55NH2LL | N-CHANNEL MOSFET | ST Microelectronics |
STD55NH2LL-1 | N-CHANNEL MOSFET | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |