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부품번호 | STK850 기능 |
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기능 | N-CHANNEL Power MOSFET | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 12 페이지수
www.DataSheet4U.com
STK850
N-channel 30V - 0.0024Ω - 30A - PolarPAK®
STripFET™ Power MOSFET
General features
Type VDSS RDS(on)
STK800 30V <0.0029Ω
RDS(on)*Qg
71nC*mΩ
PTOT
5.2W
■ Ultra low top and bottom junction to case
thermal resistance
■ Very low capacitances
■ 100% Rg tested
■ Fully incapsulated die
■ In compliance with the 2002/95/EC european
directive
■ PolarPAK® is a trademark of VISHAY
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, moreover the double sides
cooling package with ultra low junction to case
thermal resistance allows to handle higher levels
of current.
Applications
■ Switching application
PolarPAK®
Internal schematic diagram
Bottom View
Top View
Order codes
Part number
STK850
Marking
K850
Package
PolarPAK®
Packaging
Tape & reel
October 2006
Rev 6
1/12
www.st.com
12
Electrical characteristics
2 Electrical characteristics
STK850
(TCASE=25°C unless otherwise specified)
Table 3. On/off
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
ID = 250µA, VGS= 0
VDS = Max rating,
VDS = Max rating,Tc=125°C
VGS = ±16V
VDS= VGS, ID = 250µA
VGS= 10V, ID= 15A
VGS= 4.5V, ID= 15A
30 V
1 µA
10 µA
±100 nA
1 2.5 V
0.0024 0.0029 Ω
0.0029 0.0035 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
Min.
gfs (1) Forward transconductance VDS =10V, ID = 15A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=15V, ID = 30A
VGS =4.5V
(see Figure 14)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Typ.
48
3150
940
90
24.5
8
8.2
Max. Unit
S
pF
pF
pF
32.5 nC
nC
nC
4/12
4페이지 STK850
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Normalized BVDSS vs temperature
7/12
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부품번호 | 상세설명 및 기능 | 제조사 |
STK850 | N-CHANNEL Power MOSFET | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |