M58LR128HB Datasheet PDF - ST Microelectronics
| Part Number | M58LR128HB | |
| Description | (M58LR128Hx) Flash memories | |
| Manufacturers | ST Microelectronics | |
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M58LR128HT
M58LR128HB
128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst)
1.8 V supply Flash memories
Features
■ Supply voltage
– VDD = 1.7 V to 2.0 V for program, erase and
read
– VDDQ = 1.7 V to 2.0 V for I/O Buffers
– VPP = 9 V for fast program
■ Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 54 MHz
– Asynchronous Page Read mode
– Random access: 85 ns
■ Synchronous Burst Read Suspend
■ Programming time
– 2.5 µs typical word program time using
Buffer Enhanced Factory Program
command
■ Memory organization
– Multiple Bank memory array: 8 Mbit banks
– Parameter Blocks (top or bottom location)
■ Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
■ Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WP for Block Lock-Down
– Absolute Write Protection with VPP = VSS
■ Security
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
■ Common Flash Interface (CFI)
■ 100 000 program/erase cycles per block
FBGA
VFBGA56 (ZB) 7.7 × 9 mm
■ Electronic signature
– Manufacturer code: 20h
– Top device codes:
M58LR128HT: 88C4h
– Bottom device codes
M58LR128HB: 88C5h
■ VFBGA56 package
– ECOPACK® compliant
February 2007
Rev 1
1/112
www.st.com
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M58LR128HT, M58LR128HB
Contents
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for M58LR128HB electronic component. |
| Information | Total 30 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ M58LR128HB.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| M58LR128HB | The function is (M58LR128Hx) Flash memories. ST Microelectronics | |
| M58LR128HT | The function is (M58LR128Hx) Flash memories. ST Microelectronics | |
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