PDF 2N6388 Data sheet ( Hoja de datos )

Número de pieza	2N6388
Descripción	(2N6387 / 2N6388) DARLINGTON NPN SILICON POWER TRANSISTORS
Fabricantes	Motorola Semiconductors
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No Preview Available ! www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6387/D Plastic Medium-Power Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage – @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — 2N6387 VCEO(sus) = 80 Vdc (Min) — 2N6388 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc — 2N6387, 2N6388 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ• Monolithic Construction with Built–In Base–Emitter Shunt Resistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ• TO–220AB Compact Package ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating Collector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current Total Power Dissipation ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_ C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction, ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristics Thermal Resistance, Junction to Case ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient Symbol VCEO VCB VEB IC IB PD PD TJ, Tstg 2N6387 2N6388 60 80 60 80 5.0 10 10 15 15 250 65 0.52 2.0 0.016 – 65 to + 150 Symbol RθJC RθJA Max 1.92 62.5 Unit Vdc Vdc Vdc Adc mAdc Watts W/_ C Watts W/_ C _C Unit _ C/W _ C/W TA TC 4.0 80 2N6387 2N6388 *Motorola Preferred Device DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS 60 – 80 VOLTS 65 WATTS CASE 221A–06 TO–220AB 3.0 60 2.0 40 1.0 20 TC TA 0 0 20 40 60 80 100 120 T, TEMPERATURE (°C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 140 160 ©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data 1 1 page PACKAGE DIMENSIONS 2N6387 2N6388 Q H Z B 4 1 23 F T –T– SEATING PLANE C S A U K L V G N D R J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES DIM MIN MAX A 0.570 0.620 B 0.380 0.405 C 0.160 0.190 D 0.025 0.035 F 0.142 0.147 G 0.095 0.105 H 0.110 0.155 J 0.018 0.025 K 0.500 0.562 L 0.045 0.060 N 0.190 0.210 Q 0.100 0.120 R 0.080 0.110 S 0.045 0.055 T 0.235 0.255 U 0.000 0.050 V 0.045 ––– Z ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 221A–06 TO–220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 5 Page

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