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PDF 2N6426 Data sheet ( Hoja de datos )
| Número de pieza | 2N6426 | |
| Descripción | (2N6426 / 2N6427) Darlington Transistors(NPN Silicon) | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6426/D
Darlington Transistors
NPN Silicon
COLLECTOR 3
BASE
2
2N6426 *
2N6427
*Motorola Preferred Device
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40 Vdc
40 Vdc
12 Vdc
500 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
Rq JA 200 °C/W
Thermal Resistance, Junction to Case
Rq JC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (1)
(IC = 10 mAdc, VBE = 0)
Collector – Base Breakdown Voltage
(IC = 100 m Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 m Adc, IC = 0)
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
Collector Cutoff Current
(VCB= 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB= 10 Vdc, IC = 0)
v v1. Pulse Test: Pulse Width 300 m s; Duty Cycle 2.0%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
ICBO
IEBO
1
23
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Typ Max Unit
40 — — Vdc
40 — — Vdc
12 — — Vdc
— — 1.0 m Adc
— — 50 nAdc
— — 50 nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page  
1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.05
0.5
2N6426 2N6427
SINGLE PULSE
SINGLE PULSE
ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)
1.0 2.0
5.0 10
20 50 100 200
t, TIME (ms)
Figure 12. Thermal Response
500 1.0 k 2.0 k
5.0 k 10 k
1.0 k
700
500
300 TA = 25°C
200
1.0 ms
TC = 25°C 100 µs
1.0 s
FIGURE A
tP
PP
PP
100
70
50
30
20
10
0.4
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.6 1.0 2.0
4.0 6.0 10
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
40
Figure 13. Active Region Safe Operating Area
t1
1/f
+ +DUTY CYCLE
t1 f
t1
tP
PEAK PULSE POWER = PP
Design Note: Use of Transient Thermal Resistance Data
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N6426.PDF ] | |
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