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부품번호 | FDS8447 기능 |
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기능 | Single N-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
www.DataSheet4U.com
November 2006
FDS8447
Single N-Channel PowerTrench® MOSFET
tm
40V, 12.8A, 10.5mΩ
Features
General Description
Max rDS(on) = 10.5mΩ at VGS = 10V, ID = 12.8A
Max rDS(on) = 12.3mΩ at VGS = 4.5V, ID = 11.4A
Low gate charge
High performance trench technology for extremely low
rDS(on)
High power and current handling capability
RoHS compliant
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench®
process that has been especially tailored to minimize the
on-state resistance and yet maintain superior switching
performance.
Applications
DC - DC conversion
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Drain-Source Avalanche Energy
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
RθJA
Thermal Resistance-Single operation, Junction to Ambient
RθJC
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
(Note 1a)
(Note 1)
Device Marking
FDS8447
Device
FDS8447
Reel Size
13’’
Tape Width
12mm
Ratings
40
±20
12.8
50
150
2.5
1
-55 to 150
Units
V
V
A
mJ
W
°C
50 °C/W
25
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS8447 Rev. B
1
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
10
8 VDD = 10V
6 VDD = 20V
4 VDD = 30V
2
0
0 10 20 30 40
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
104
Ciss
103
Coss
102 Crss
f = 1MHz
VGS = 0V
101
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
40
Figure 8. Capacitance vs Drain to Source Voltage
16
13
10 TJ = 25oC
7
TJ = 125oC
4
1
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive Switching
Capability
15
12 VGS = 10V
9
6 VGS = 4.5V
3
RθJA = 50oC/W
0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
100
100us
10
1ms
1
0.1
0.01
0.01
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TA = 25OC
10ms
100ms
1s
10s
DC
0.1 1 10 100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
2000
1000
VGS = 10V
100
10
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
SINGLE PULSE
1
10-4 10-3 10-2 10-1 100 101 102 103
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum Power
Dissipation
FDS8447 Rev.B
4 www.fairchildsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS8447 | Single N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDS8449 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |