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부품번호 | STP12IE90F4 기능 |
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기능 | Emitter Switched Bipolar Transistor | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 11 페이지수
www.DataSheet4U.com
STP12IE90F4
Emitter Switched Bipolar Transistor
ESBT® 900 V - 12 A - 0.083 Ω
General features
VCS(ON)
1V
IC
12A
RCS(ON)
0.083 W
■ High voltage / high current Cascode
configuration
■ Low equivalent on resistance
■ Very fast-switch up to 150 kHz
■ Squared RBSOA up to 900V
■ Very low Ciss driven by RG = 47Ω
■ Very low turn-off cross over time
Applications
■ Flyback SMPS for adapter
■ Flyback / forward SMPS for desktop
Description
The STP12IE90F4 is manufactured in Monolithic
ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage applica-
tions.
It is designed for use in Gate Driven based topolo-
gies.
TO220FP-4L
Internal schematic diagrams
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Order codes
Part Number
Marking
STP12IE90F4
P12IE90F4
Package
TO220FP-4L
Packing
Tube
January 2007
Rev 2
1/11
www.st.com
11
Electrical characteristics
2 Electrical characteristics
STP12IE90F4
(Tcase = 25°C unless otherwise specified)
Table 3.
Symbol
Electrical characteristics
Parameter
Test Conditions
Min. Typ. Max. Unit
ICS(SS)
Collector-source current
(VBS = VGS = 0)
VCE = 900V
100
IBS(OS)
Base-source current
(IC = 0, VGS = 0)
VBS(OS) = 30V
10
ISB(OS)
Source-base current
(IC = 0, VGS = 0)
VSB(OS) = 17V
100
IGS(OS) Gate-source leakage
VGS = ± 17V
100
VCS(ON)
Collector-source ON
voltage
VGS = 10V _IC = 12A IB = 2.4A
VGS = 10V_ IC = 6A IB = 0.6A
1
0.6
hFE DC current gain
VGS = 10V_ IC = 12A VCS = 1V
VGS = 10V_ IC = 6A_ VCS = 1V
5
15
VBS(ON)
Base Source ON voltage
VGS = 10V_ IC = 12A IB = 2.4A
VGS = 10V_ IC = 6A_ IB = 0.6A
1.5
1.2
VGS(th) Gate threshold voltage VBS = VGS ______IB = 250µA
2 34
Ciss Input capacitance
VCS =25V f =1MHz
VGS=0V
520
QGS(tot) Gate-source Charge
VCS=25V
VCB=0V
VGS=10V
IC =4A
21.3
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
VClamp =720V
IC =6A
RG =47Ω
tp =4µs
IB =1.2A
610
10
INDUCTIVE LOAD
ts Storage time
tf Fall time
VGS =10V
VClamp =720V
IC =6A
RG =47Ω
tp =4µs
IB =0.6A
360
10
VCSW
Maximum collector-
source voltage switched
without snubber
RG =47Ω
IC = 12A
hFE =5
900
µA
µA
µA
nA
V
V
V
V
V
pF
nC
ns
ns
ns
ns
V
4/11
4페이지 STP12IE90F4
2.2 Test circuits
Figure 9. Static VCS(ON) test circuits
Electrical characteristics
Figure 10. Inductive load switching and RBSOA test circuit
7/11
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
STP12IE90F4 | Emitter Switched Bipolar Transistor | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |