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부품번호 | BF245A 기능 |
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기능 | JFET VHF/UHF Amplifiers | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 8 페이지수
www.DataSheet4U.com
ON Semiconductort
JFET VHF/UHF Amplifiers
N–Channel — Depletion
BF245A
BF245B
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current
Forward Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Storage Channel Temperature Range
3 DRAIN
Symbol
VDS
VDG
VGS
ID
IG(f)
PD
Tstg
Value
±30
30
30
100
10
350
2.8
–65 to +150
3 DRAIN
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
°C
2
GATE
STYLE 22
1 SOURCE
1
GATE
STYLE 23
2 SOURCE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 1.0 µAdc, VDS = 0)
Gate–Source
(VDS = 15 Vdc, ID = 200 µAdc)
BF245(1)
BF245A, BF244A(2)
BF245B, BF244B
BF245C
V(BR)GSS
VGS
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
BF245(1)
BF245A, BF244A(2)
BF245B, BF244B
BF245C
VGS(off)
IGSS
IDSS
1. On orders against the BF245, any or all subgroups might be shipped.
2. On orders against the BF244A, any or all subgroups might be shipped.
Min
30
0.4
0.4
1.6
3.2
–ā0.5
—
2.0
2.0
6.0
12
1
23
BF244A, BF244B
CASE 29–11, STYLE 22
TO–92 (TO–226AA)
1
23
BF245, BF245A,
BF245B, BF245C
CASE 29–11, STYLE 23
TO–92 (TO–226AA)
Typ Max
Unit
— — Vdc
Vdc
— 7.5
— 2.2
— 3.8
— 7.5
— –ā8.0 Vdc
— 5.0 nAdc
mAdc
— 25
— 6.5
— 15
— 25
© Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 0
1
Publication Order Number:
BF245A/D
BF245A BF245B
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)
20
10
7.0 gig @ IDSS
5.0
3.0 grg @ 0.25 IDSS
2.0
1.0
0.7
0.5
0.3
0.2
10
big @ IDSS
20 30
big @ 0.25 IDSS
50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 9. Input Admittance (yig)
0.5
0.3
0.2 brg @ IDSS
0.1
0.07
0.05
0.03 0.25 IDSS
0.02
0.01
0.007
0.005
10
gig @ IDSS, 0.25 IDSS
20 30
50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 10. Reverse Transfer Admittance (yrg)
10
7.0 gfg @ IDSS
5.0
3.0 gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
0.3 bfg @ IDSS
0.2 brg @ 0.25 IDSS
0.1
10
20 30 50 70 100
200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 11. Forward Transfer Admittance (yfg)
1.0
0.7 bog @ IDSS, 0.25 IDSS
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
10
gog @ IDSS
gog @ 0.25 IDSS
20 30 50 70 100
200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 12. Output Admittance (yog)
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4
4페이지 Notes
BF245A BF245B
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부품번호 | 상세설명 및 기능 | 제조사 |
BF245 | N-CHANNEL JUNCTION FET | Micro Electronics |
BF245 | N-Channel junction field-Effect Transistors | Siemens Semiconductor Group |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |