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Número de pieza | BSP52T3 | |
Descripción | (BSP52T1 / BSP52T3) NPN Small-Signal Darlington Transistor | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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BSP52T1, BSP52T3
Preferred Devices
NPN Small−Signal
Darlington Transistor
This NPN small signal Darlington transistor is designed for use in
switching applications, such as print hammer, relay, solenoid and lamp
drivers. The device is housed in the SOT-223 package, which is
designed for medium power surface mount applications.
Features
• The SOT-223 Package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
• Available in 12 mm Tape and Reel
Use BSP52T1 to order the 7 inch/1000 unit reel
• PNP Complement is BSP62T1
• Pb−Free Packages are Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
VCES
VCBO
VEBO
IC
PD
80 Vdc
90 Vdc
5.0 Vdc
1.0 Adc
0.8 W
6.4 mW/°C
Total Power Dissipation (Note 2)
@ TA = 25°C
Derate above 25°C
PD
1.25 W
10 mW/°C
Operating and Storage
Temperature Range
TJ, Tstg −65 to 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance (Note 1)
Junction-to-Ambient
Symbol
RqJA
Value
156
Unit
°C/W
Thermal Resistance (Note 2)
Junction-to-Ambient
RqJA
100 °C/W
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
TL
260 °C
10 Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum
recommended footprint.
2. Device mounted on a FR-4 glass epoxy printed circuit board using 1 cm2 pad.
http://onsemi.com
MEDIUM POWER
NPN SILICON
SURFACE MOUNT
DARLINGTON TRANSISTOR
COLLECTOR 2,4
BASE
1
EMITTER 3
MARKING DIAGRAM
4
1
2
3
SOT−223
CASE 318E
STYLE 1
AYW
AS3G
G
A = Assembly Location
Y = Year
W = Work Week
AS3 = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
BSP52T1
SOT−223 1000/Tape & Reel
BSP52T1G
SOT−223 1000/Tape & Reel
(Pb−Free)
BSP52T3
SOT−223 4000/Tape & Reel
BSP52T3G
SOT−223 4000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 5
1
Publication Order Number:
BSP52T1/D
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet BSP52T3.PDF ] |
Número de pieza | Descripción | Fabricantes |
BSP52T1 | MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT | Motorola Inc |
BSP52T1 | MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT | ON Semiconductor |
BSP52T1G | NPN Small-Signal Darlington Transistor | ON Semiconductor |
BSP52T3 | (BSP52T1 / BSP52T3) NPN Small-Signal Darlington Transistor | ON Semiconductor |
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