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PDF BUB323Z Data sheet ( Hoja de datos )
| Número de pieza | BUB323Z | |
| Descripción | NPN Silicon Power Darlington | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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BUB323Z
NPN Silicon Power
Darlington
High Voltage Autoprotected
D2PAK for Surface Mount
The BUB323Z is a planar, monolithic, high–voltage power
Darlington with a built–in active zener clamping circuit. This device is
specifically designed for unclamped, inductive applications such as
Electronic Ignition, Switching Regulators and Motor Control, and
exhibit the following main features:
• Integrated High–Voltage Active Clamp
• Tight Clamping Voltage Window (350 V to 450 V) Guaranteed
Over the –40°C to +125°C Temperature Range
• Clamping Energy Capability 100% Tested in a Live
Ignition Circuit
• High DC Current Gain/Low Saturation Voltages
Specified Over Full Temperature Range
• Design Guarantees Operation in SOA at All Times
MAXIMUM RATINGS
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current – Continuous
– Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
– Continuous
– Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎfor Soldering Purposes,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1/8″ from Case for 5 Seconds
Symbol
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
Symbol
RθJC
RθJA
TL
Value
350
6.0
10
20
3.0
6.0
150
1.0
–65 to
+175
Max
1.0
62.5
260
Unit
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
_C/W
_C
http://onsemi.com
AUTOPROTECTED
DARLINGTON
10 AMPERES
360–450 VOLTS CLAMP
150 WATTS
360 V
CLAMP
MARKING DIAGRAM
D2PAK
CASE 418B
STYLE 1
BUB323Z
YWW
BUB323Z = Specific Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
BUB323Z
D2PAK
50 Units/Rail
BUB323ZT4
D2PAK 800/Tape & Reel
© Semiconductor Components Industries, LLC, 2001
September, 2001 – Rev. 0
1
Publication Order Number:
BUB323Z/D
1 page  
10000
1000
100
10
100
TJ = 125°C
-40°C
25°C
VCE = 1.5 V
1000
IC, COLLECTOR CURRENT (MILLIAMPS)
Figure 5. DC Current Gain
BUB323Z
10000
TYPICAL
1000
TYP + 6Σ
100
TYP - 6Σ
10000
10
100
VCE = 5 V, TJ = 25°C
1000 10000
IC, COLLECTOR CURRENT (MILLIAMPS)
Figure 6. DC Current Gain
100000
5.0
4.5 IC = 3 A
4.0
TJ = 25°C
3.5
3.0 5 A
2.5
8A
10 A
2.0 7 A
1.5
1.0
0.5
0
1 10 100
IB, BASE CURRENT (MILLIAMPS)
Figure 7. Collector Saturation Region
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
IC/IB = 150
TJ = 125°C
25°C
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 8. Collector–Emitter Saturation Voltage
2.0
IC/IB = 150
1.8
1.6
1.4
1.2
TJ = 25°C
125°C
2.0
VCE = 2 VOLTS
1.8
1.6
1.4 TJ = 25°C
1.2
1.0
125°C
1.0 0.8
0.8
0.1
1
IC, COLLECTOR CURRENT (AMPS)
0.6
10 0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 9. Base–Emitter Saturation Voltage
Figure 10. Base–Emitter “ON” Voltages
http://onsemi.com
5
5 Page 
Notes
BUB323Z
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BUB323Z.PDF ] | |
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