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부품번호 | CS209A 기능 |
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기능 | Proximity Detector | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 8 페이지수
www.DataSheet4U.com
CS209A
Proximity Detector
The CS209A is a bipolar monolithic integrated circuit for use in
metal detection/proximity sensing applications. The IC (see Figure 1)
contains two on−chip current regulators, oscillator and low−level
feedback circuitry, peak detection/demodulation circuit, a comparator
and two complementary output stages.
The oscillator, along with an external LC network, provides
controlled oscillations where amplitude is highly dependent on the Q
of the LC tank. During low Q conditions, a variable low−level
feedback circuit provides drive to maintain oscillation. The peak
demodulator senses the negative portion of the oscillator envelope and
provides a demodulated waveform as input to the comparator. The
comparator sets the states of the complementary outputs by comparing
the input from the demodulator to an internal reference. External loads
are required for the output pins.
A transient suppression circuit is included to absorb negative
transients at the tank circuit terminal.
Features
• Separate Current Regulator for Oscillator
• Negative Transient Suppression
• Variable Low−Level Feedback
• Improved Performance Over Temperature
• 6.0 mA Supply Current Consumption at VCC = 12 V
• Output Current Sink Capability
− 20 mA at 4.0 VCC
− 100 mA at 24 VCC
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8
1
8
1
14
1
DIP−8
N SUFFIX
CASE 626
MARKING
8 DIAGRAMS
CS209A
AWL
YYWW
SO−8
D SUFFIX
CASE 751
SO−14
D SUFFIX
CASE 751A
1
8
209A
ALYWX
1
14
CS209A
AWLYWW
1
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
ORDERING INFORMATION
Device
Package
Shipping
CS209AYN8
DIP−8
50 Units/Rail
CS209AYD8
SO−8
95 Units/Rail
CS209AYDR8
SO−8
2500 Tape & Reel
CS209AYD14
SO−14
55 Units/Rail
CS209AYDR14 SO−14
2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 3
1
Publication Order Number:
CS209A/D
CS209A
TYPICAL PERFORMANCE CHARACTERISTICS
8
(T = 25°C, VCC = 12 V)
6
6.5
(VCC = 12 V, RLOAD = 1.0 kΩ)
5.5
4
0.1 kΩ
2
04
8 12
Output Load (kΩ)
16
20
Figure 2. Output Switching Delay vs.
Output Load
4.5
3.5
2.5
−40
−20 0
20 40 60 80 100
Temperature (°C)
Figure 3. Output Switching Delay vs.
Temperature
120
Object
Detected
1.75
(T = 25°C, VCC = 12 V)
1.5
1.25
1.0
2.5 kΩ 5.0 kΩ 7.5 kΩ
12.5 kΩ
15 kΩ
17.5 kΩ
Object Not
Detected,
L Unloaded
0.75
0
0.100
0.200
0.300
Distance To Object (in.)
Figure 4. Demodulator Voltage vs. Distance for Different RF
0.400
PRINCIPLE OF OPERATION
The CS209A is a metal detector circuit which operates on
the principle of detecting a reduction in Q of an inductor
when it is brought into close proximity of metal. The
CS209A contains an oscillator set up by an external parallel
resonant tank and a feedback resistor connected between
OSC and RF. (See Figure 5.) The impedance of a parallel
resonant tank is highest when the frequency of the source
driving it is equal to the tank’s resonant frequency. In the
CS209A the internal oscillator operates close to the resonant
frequency of the tank circuit selected. As a metal object is
brought close to the inductor, the amplitude of the voltage
across the tank gradually begins to drop. When the envelope
of the oscillation reaches a certain level, the IC causes the
output stages to switch states.
The detection is performed as follows: A capacitor
connected to DEMOD is charged via an internal 30 μA current
source. This current, however, is diverted away from the
capacitor in proportion to the negative bias generated by the
tank at TANK. Charge is therefore removed from the capacitor
tied to DEMOD on every negative half cycle of the resonant
voltage. (See Figure 6) The voltage on the capacitor at
DEMOD, a DC voltage with ripple, is then directly compared
to an internal 1.44 V reference. When the internal comparator
trips it turns on a transistor which places a 23.6 kΩ resistor in
parallel to the 4.8 kΩ. The resulting reference then becomes
approximately 1.2 V. This hysteresis is necessary for preventing
false triggering.
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4
4페이지 CS209A
PACKAGE DIMENSIONS
DIP−8
N SUFFIX
CASE 626−05
ISSUE L
NOTE 2
85
14
F
−A−
−B−
−T−
SEATING
PLANE
H
C
N
DK
G
0.13 (0.005) M T A M B M
L
J
M
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 9.40 10.16 0.370 0.400
B 6.10 6.60 0.240 0.260
C 3.94 4.45 0.155 0.175
D 0.38 0.51 0.015 0.020
F 1.02 1.78 0.040 0.070
G 2.54 BSC
0.100 BSC
H 0.76 1.27 0.030 0.050
J 0.20 0.30 0.008 0.012
K 2.92 3.43 0.115 0.135
L 7.62 BSC
0.300 BSC
M −−− 10_ −−− 10_
N 0.76 1.01 0.030 0.040
−X−
A
SO−8
D SUFFIX
CASE 751−07
ISSUE W
B
−Y−
−Z−
H
85
S 0.25 (0.010) M Y M
1
4
K
G
D
C
SEATING
PLANE
N X 45 _
0.10 (0.004)
M
0.25 (0.010) M Z Y S X S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC
0.050 BSC
H 0.10 0.25 0.004 0.010
J J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0_ 8_ 0_ 8_
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
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부품번호 | 상세설명 및 기능 | 제조사 |
CS2091 | High Voltage Power Supplies | Power Solutions |
CS209A | Proximity Detector | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |