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부품번호 | DTC114EXV3T1 기능 |
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기능 | Digital Transistors (BRT) NPN Silicon Surface Mount Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 10 페이지수
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DTC114EXV3T1 Series
Digital Transistors (BRT)
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SC−89 package which is designed for low power surface mount
applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape & Reel
• Lead−Free Solder Plating (Pure Sn)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
VCBO
VCEO
IC
50
50
100
Unit
Vdc
Vdc
mAdc
http://onsemi.com
NPN SILICON
DIGITAL
TRANSISTORS
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
3
2
1
SC−89
CASE 463C
STYLE 1
MARKING DIAGRAM
3
xx D
12
xx = Specific Device Code
(See Marking Table on page 2)
D = Date Code
© Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 0
1
Publication Order Number:
DTC114EXV3T1/D
250
200
150
100
50
0−50
DTC114EXV3T1 Series
RθJA = 600°C/W
0 50 100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
150
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01 0.1
t, TIME (s)
1.0
Figure 2. Normalized Thermal Response
10
100 1000
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4
4페이지 10
IC/IB = 10
DTC114EXV3T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTC144EXV3T1
1000
1
TA = −25°C
25°C 100
0.1 75°C
VCE = 10 V
TA = 75°C
25°C
−25°C
0.01
0
1
0.8
0.6
0.4
0.2
00
20 40
IC, COLLECTOR CURRENT (mA)
Figure 13. VCE(sat) versus IC
50 10 1
10
IC, COLLECTOR CURRENT (mA)
Figure 14. DC Current Gain
100
f = 1 MHz
IE = 0 V
TA = 25°C
100 25°C
75°C
10 TA = −25°C
1
0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 15. Output Capacitance
0.01
0.001
50 0
VO = 5 V
24 6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 16. Output Current versus Input Voltage
100
VO = 0.2 V
10
TA = −25°C
25°C
75°C
1
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 17. Input Voltage versus Output Current
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부품번호 | 상세설명 및 기능 | 제조사 |
DTC114EXV3T1 | Digital Transistors (BRT) NPN Silicon Surface Mount Transistors | ON Semiconductor |
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