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PDF EMC2DXV5T1 Data sheet ( Hoja de datos )
| Número de pieza | EMC2DXV5T1 | |
| Descripción | (EMC2DXV5T1 / EMC5DXV5T1) Dual Common Base-Collector Bias Resistor Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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EMC2DXV5T1,
EMC5DXV5T1
Preferred Devices
Dual Common
Base−Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMC5DXV5T1 series,
two complementary BRT devices are housed in the SOT−553 package
which is ideal for low power surface mount applications where board
space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch Tape and Reel
• Lead Free
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, − minus sign for Q1 (PNP) omitted)
Rating
Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
VCBO
VCEO
IC
50 Vdc
50 Vdc
100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
Thermal Resistance −
Junction-to-Ambient
RqJA
Characteristic
(Both Junctions Heated)
Symbol
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
Thermal Resistance −
Junction-to-Ambient
RqJA
Junction and Storage Temperature TJ, Tstg
1. FR−4 @ Minimum Pad
Max
357 (Note 1)
2.9 (Note 1)
350 (Note 1)
Max
500 (Note 1)
4.0 (Note 1)
250 (Note 1)
−55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C
http://onsemi.com
32
R1 R2
1
Q1
4
R2
R1
Q2
5
5
1
SOT−553
CASE 463B
MARKING
DIAGRAM
5
xx D
1
xx = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
EMC2DXV5T1
SOT−553
4 mm pitch
4000/Tape & Reel
EMC2DXV5T5
SOT−553
2 mm pitch
8000/Tape & Reel
EMC5DXV5T1
SOT−553
4 mm pitch
4000/Tape & Reel
EMC5DXV5T5
SOT−553
2 mm pitch
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
September, 2003 − Rev. 1
1
Publication Order Number:
EMC2DXV5T1/D
1 page  
EMC2DXV5T1, EMC5DXV5T1
TYPICAL ELECTRICAL CHARACTERISTICS — EMC2DXV5T1 NPN TRANSISTOR
1
IC/IB = 10
0.1
0.01
TA = −25°C
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
−25°C
0.001
0
20 40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
10
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
4 100 25°C
f = 1 MHz
75°C
3
IE = 0 mA
TA = 25°C
10
TA = −25°C
1
2
0.1
1
0.01
VO = 5 V
0 0 10 20 30 40 50 0.001 0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
10
VO = 0.2 V
1
TA = −25°C
75°C
25°C
0.1
0 10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output
Current
50
http://onsemi.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet EMC2DXV5T1.PDF ] | |
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