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EMC3DXV5T1 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 EMC3DXV5T1
기능 (EMC3DXV5T1 / EMC4DXV5T1) Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors
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EMC3DXV5T1 데이터시트, 핀배열, 회로
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EMC2DXV5T1,
EMC3DXV5T1,
EMC4DXV5T1,
EMC5DXV5T1
Preferred Devices
Dual Common
Base−Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMC2DXV5T1 series,
two complementary BRT devices are housed in the SOT−553 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These are Pb−Free Devices
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, − minus sign for Q1 (PNP) omitted)
Rating
Symbol Value Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC 100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
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32
R1 R2
1
Q1
4
R2
R1
Q2
5
5
1
SOT−553
CASE 463B
MARKING DIAGRAM
Ux M G
G
Ux = Specific Device Code
x = C, 3, E, or 5
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
October, 2005 − Rev. 4
1
Publication Order Number:
EMC2DXV5T1/D




EMC3DXV5T1 pdf, 반도체, 판매, 대치품
EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1
TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 PNP TRANSISTOR
10
IC/IB = 10
1000
VCE = 10 V
1 25°C
TA = −25°C
100
75°C
0.1
TA = 75°C
25°C
−25°C
0.01
0
20 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
10
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
4 100
f = 1 MHz
75°C 25°C
3
lE = 0 mA
TA = 25°C
10
TA = −25°C
1
2
0.1
1
0.01
VO = 5 V
0
0 10
20
30
40 50 0.001 0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
VO = 0.2 V
TA = −25°C
10 25°C
75°C
1
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage versus Output Current
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EMC3DXV5T1 전자부품, 판매, 대치품
EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1
TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 NPN TRANSISTOR
1
IC/IB = 10
0.1 TA = −25°C
0.01
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
−25°C
0.001
0
4
3
2
1
00
20 40
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) versus IC
50
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
100
f = 1 MHz
IE = 0 mA
TA = 25°C
100
10
1
75°C
25°C
TA = −25°C
0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (V)
Figure 19. Output Capacitance
0.01
50 0.001 0
VO = 5 V
2 46 8
Vin, INPUT VOLTAGE (V)
10
Figure 20. Output Current versus Input Voltage
100
VO = 0.2 V
10
1
TA = −25°C
75°C 25°C
0.1 0 10
20
30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output
Current
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