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부품번호 | MBR30H100CT 기능 |
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기능 | SWITCHMODE Power Rectifier | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 8 페이지수
MBR30H100CT,
MBRF30H100CT
Switch‐mode
Power Rectifier
100 V, 30 A
Features and Benefits
• Low Forward Voltage: 0.67 V @ 125°C
• Low Power Loss/High Efficiency
• High Surge Capacity
• 175°C Operating Junction Temperature
• 30 A Total (15 A Per Diode Leg)
• These are Pb−Free Devices
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• ESD Rating: Human Body Model = 3B
Machine Model = C
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SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
100 VOLTS
1
2, 4
3
MARKING
DIAGRAMS
4
1
2
3
TO−220
CASE 221A
STYLE 6
AYWW
B30H100G
AKA
ISOLATED TO−220
CASE 221D
STYLE 3
AYWW
B30H100G
AKA
1
2
3
A = Assembly Location
Y = Year
WW = Work Week
B30H100 = Device Code
G = Pb−Free Package
AKA = Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 5
1
Publication Order Number:
MBR30H100CT/D
MBR30H100CT, MBRF30H100CT
30
28
26
TJ = 175°C
24
SQUARE WAVE
22
20
18
16 dc
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 7. Forward Power Dissipation
10000
1000
100
10
0
TJ = 25°C
20 40 60 80
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
100
100
D = 0.5
10
0.2
0.1
1 0.05
0.01
0.1
0.01
0.000001
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, TIME (sec)
Figure 9. Thermal Response Junction−to−Ambient for MBR30H100CT
100 1000
10
D = 0.5
1
0.2
0.1
0.05
0.1
0.01
P(pk)
t1
t2
SINGLE PULSE
DUTY CYCLE, D = t1/t2
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
t1, TIME (sec)
Figure 10. Thermal Response Junction−to−Case for MBR30H100CT
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4
4페이지 MBR30H100CT, MBRF30H100CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
BF
Q
H
Z
4
1 23
A
K
L
V
G
N
D
−T−
SEATING
PLANE
C
TS
U
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.415
C 0.160 0.190
D 0.025 0.038
F 0.142 0.161
G 0.095 0.105
H 0.110 0.161
J 0.014 0.024
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 ---
Z --- 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.53
4.07 4.83
0.64 0.96
3.61 4.09
2.42 2.66
2.80 4.10
0.36 0.61
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 ---
--- 2.04
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
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7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |