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PDF MCR12DSN Data sheet ( Hoja de datos )
| Número de pieza | MCR12DSN | |
| Descripción | Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors | |
| Fabricantes | ON Semiconductor | |
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MCR12DSM, MCR12DSN
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
• Small Size
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
• Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz,
Gate Open)
MCR12DSM
MCR12DSN
VDRM,
VRRM
600
800
Unit
V
On−State RMS Current
(180° Conduction Angles; TC = 75°C)
IT(RMS)
12
A
Average On−State Current
(180° Conduction Angles; TC = 75°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)
Circuit Fusing Consideration (t = 8.3 msec)
IT(AV)
ITSM
I2t
7.6 A
100 A
41 A2sec
Forward Peak Gate Power
(Pulse Width ≤ 1.0 msec, TC = 75°C)
Forward Average Gate Power
(t = 8.3 msec, TC = 75°C)
PGM
PG(AV)
5.0
0.5
W
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 msec, TC = 75°C)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to 110 °C
Storage Temperature Range
Tstg −40 to 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
http://onsemi.com
SCRs
12 AMPERES RMS
600 − 800 VOLTS
G
AK
12
3
4
DPAK
CASE 369C
STYLE 4
MARKING
DIAGRAMS
YWW
R1
2DSxG
1
2
3
4
DPAK−3
CASE 369D
STYLE 4
YWW
R1
2DSxG
Y
WW
R12DSx
G
= Year
= Work Week
= Device Code
x= M or N
= Pb−Free Package
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 4
1
Publication Order Number:
MCR12DSM/D
1 page  
MCR12DSM, MCR12DSN
10
TJ = 25°C
8.0
6.0
IGT = 25 mA
4.0
2.0 IGT = 10 mA
0
100
1000
RGK, GATE−CATHODE RESISTANCE (OHMS)
Figure 9. Holding Current versus
Gate−Cathode Resistance
10 K
1000
400 V
100 600 V
VPK = 800 V
10
TJ = 110°C
1000
100 70°C
90°C
TJ = 110°C
10
1.0
100
RGK, GATE−CATHODE RESISTANCE (OHMS)
1000
Figure 10. Exponential Static dv/dt versus
Gate−Cathode Resistance and Junction
Temperature
1000
VD = 800 V
TJ = 110°C
100 IGT = 25 mA
IGT = 10 mA
10
1.0
100
RGK, GATE−CATHODE RESISTANCE (OHMS)
1000
Figure 11. Exponential Static dv/dt versus
Gate−Cathode Resistance and Peak Voltage
1.0
100
RGK, GATE−CATHODE RESISTANCE (OHMS)
1000
Figure 12. Exponential Static dv/dt versus
Gate−Cathode Resistance and Gate Trigger
Current Sensitivity
ORDERING INFORMATION
Device
Package Type
Package
Shipping†
MCR12DSMT4
DPAK
369C
2500 / Tape & Reel
MCR12DSMT4G
DPAK
(Pb−Free)
369C
2500 / Tape & Reel
MCR12DSN−001
DPAK−3
369D
75 Units / Rail
MCR12DSN−001G
DPAK−3
(Pb−Free)
369D
75 Units / Rail
MCR12DSNT4
DPAK
369C
2500 / Tape & Reel
MCR12DSNT4G
DPAK
(Pb−Free)
369C
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MCR12DSN.PDF ] | |
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